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Trade Name:MSC050SDA170B
Data Manual:MSC050SDA170B.pdf
Brand:Microchip
Particular Year:23+
Package:TO-247
Delivery Date:New original
Stock: 3000pcs
The MSC050SDA170B device is a 1700V 136A silicon carbide (SiC) Schottky barrier diode. The silicon carbide device has higher dielectric breakdown field, higher band gap and higher thermal conductivity. The silicon carbide Schottky diode has zero forward and reverse recovery charges, which can reduce the switching loss of diode. These devices also feature temperature-independent switches to ensure stable high-temperature performance.
Product specification
Technology: SiC (Silicon Carbide) Schottky
Voltage-dc reverse (Vr) (Max.) : 1700 V
Current-average rectification (Io) : 136A
Different If voltage - forward (Vf) : 1.8V @ 50 A
Speed: None Recovery time > 500mA (Io)
Reverse recovery time (trr) : 0 ns
Current - reverse leakage at different Vr: 200µA @ 1700 V
Capacitance in different Vr and F: 4450pF @ 1V, 1MHz
Installation type: Through hole
Package/case: TO-247-2
Supplier device package: TO-247
Operating temperature - junction: -55°C ~ 175°C
Basic product number: MSC050
Key Advantages and features
High switching frequency
Low switching losses
Low noise (EMI) switching
Higher reliability systems
Increased system power density
No reverse recovery
Low forward voltage
Low leakage current
Avalanche energy rated
RoHS compliant
Model
Brand
Package
Quantity
Describe
ST
TO-263-3
1000
150 V, 2 x 20 A high-voltage Schottky rectifiers for automotive applications
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Microchip Technology Incorporated (Nasdaq: MCHP) Microchip Semiconductor is the worlds leading supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower system totals for thousands of consumer products world…
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