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The IMZA120R014M1H 1200V 14mΩ CoolSiCTM SiC MOSFET in TO247-4 package is based on an advanced trench process optimized for performance and reliability. Compared with traditional silicon (Si)-based devices such as IGBTs and MOSFETs, SiC MOSFETs offer many advantages, such as the lowest gate charge and device capacitance in 1200 V switching devices, no reverse recovery losses in the body diode, and turn-off losses are affected by temperature. Turn-on characteristics with little influence and no knee voltage. Therefore, CoolSiC™ SiC MOSFETs are ideal for hard switching and resonant switching topologies such as power factor correction (PFC) circuits, bidirectional topologies, and DC-DC converters or DC-AC inverters.

Infineon's SiC MOSFETs in the TO247-4 package reduce the effect of source parasitic inductance on the gate circuit, enabling faster switching and higher efficiency.

Feature description

Outstanding switching and conduction losses

High threshold voltage, Vth > 4 V

0V turn-off gate voltage for simple gate drive

Wide gate-source voltage range

Robust low loss body diode for hard switching

Turn-off losses are less affected by temperature

.XT diffusion welding technology for best-in-class thermal performance

Application field

Uninterruptible Power Supply (UPS)

battery formation

Electric vehicle fast charging

Motor Control and Drive

Solar System Solutions

• 1.Is the inventory and price seen on the platform accurate?

  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

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  A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

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• 6.Can the company issue an invoice?

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