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Service Telephone:86-755-83294757
Trade Name:S25FL064LABNFM011
Data Manual:S25FL064LABNFM011.pdf
Brand:INFINEON
Particular Year:23+
Package:WSON-8
Delivery Date:New and Original
Stock: 1000pcs
The S25FL064LABNFM011 is a 3.0 V, single-supply Flash memory device in a 65 nm floating gate process.
The FL-L series uses double data rate (DDR) read commands for address transfers and QIOs and QPIs for reading data on both sides of the clock. the architecture uses a page programming buffer that allows programming of up to 256 bytes in a single operation. The architecture is also available in individual 4KB sectors, 32KB half blocks, 64KB blocks, or full chip erase.FL-L NOR Flash offers the high density, flexibility, and fast performance used in a variety of mobile or embedded applications.
The flash provides an excellent storage solution for limited space, signal connections and power systems. In addition, the flash is well suited for code masking for RAM, direct code execution (XIP) and storing reprogrammable data.
Features
Multi-I/O Serial Peripheral Interface (SPI)
Clock polarity and phase modes 0 and 3
Double Data Rate (DDR) option
Quad Peripheral Interface (QPI) option
Extended addressing: 24-bit or 32-bit address options
Serial command subset and footprint compatible with the S25FL-A, S25FL1-K, S25FL-P, S25FL-S and S25FS-S SPI families
Multi-I/O command subset and footprint compatible with the S25FL-P, S25FL-S, and S25FS-S SPI families
Read
Commands: Normal, Fast, Dual I/O, Quad I/O, Dual O, Quad O, DDR Quad I/O
Modes: Burst Loopback, Continuous (XIP), QPI
Serial Flash Discoverable Parameters (SFDP) for configuration information
Programming architecture
256-byte page programming buffer 3.0V FL-L flash memory
Program pause and resume
Erase Architecture
Unified 4KB sector erase
Unified 32KB half-block erase
Unified 64KB block erase
Chip Erase
Erase pause and resume
100,000 programme erase cycles
20 years of data retention
Typical Technology
65nm floating gate technology
Safety Features
Status and configuration register protection
Four 256-byte security zones, all external to the main flash array
Traditional block protection: block ranges
Individual and regional protection
Individual block locking: volatile individual sectors/blocks
Pointer regions: non-volatile sector/block ranges
Power lockout, password or permanent protection for security areas 2 and 3 and pointer area
Single supply voltage with CMOS I/O: 2.7V to 3.6V
Temperature range: Automotive AEC-Q100 Class 1 compliant (-40°C to +125°C)
Model
Brand
Package
Quantity
Describe
INFINEON
BGA-24
3000
FLASH - NOR Memory IC 256Mb SPI - Four I/O 133 MHz 24-BGA (8x6)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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