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Trade Name:IHW20N140R5L
Data Manual:
IHW20N140R5L.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 1000pcs
The IHW20N140R5L 1400V, 20A IGBT discrete device is in a TO-247-3 pin package and is designed TO meet the specific requirements of inductive cooking applications. The 1400V reverse pilot R5L IGBT uses a monolithic integrated diode to deliver higher breakdown voltages, lower VCEsat and overall lower power losses, providing the perfect balance between power loss and EMI performance for all soft switching applications.
Advantages
Reduce power loss in applications
Reduce component stress in cookware
High energy efficiency
Higher system power capability
Better robustness and reliability
Preferred design flexibility
Narrow power loss distribution
Advanced thermal performance
Feature description
The blocking voltage is 1400V
Reduce conduction loss
VF reduction
Reduce switching losses
Extremely tight parameter distribution
TJ (maximum) =175°C
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 75 A TO 264
Microchip
TO-247-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
2000
Insulated Gate Bipolar Transistor (IGBT) PT MOS 7 Single 1200 V 35 A TO-247
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 100 A TO 264
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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