sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STPSC20H12G2Y
Data Manual:STPSC20H12G2Y.pdf
Brand:ST
Particular Year:23+
Package:D2PAK HV
Delivery Date:New and Original
Stock: 1000pcs
The STPSC20H12G2Y SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. This wide bandgap material allows the design of a Schottky diode with a rated voltage of 1200 V. The diode is designed to operate with no recovery at turn-off. Due to the Schottky structure there is no recovery on shutdown and ringing modes are negligible. Minimum The capacitive shutdown behaviour is temperature independent. Particularly suitable for PFC applications to improve performance under harsh switching conditions. Their high forward surge capability ensures good robustness during transient phases.
Features
● AEC-Q101 certified
● No or negligible reverse recovery
● Temperature independent switching behaviour
● Robust high-voltage periphery
● PPAP support
● Operating temperature range: from -40 °C to 175 °C
● D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
● ECOPACK-compliant
Compliant with ECOPACK standard
● On-board chargers
Model
Brand
Package
Quantity
Describe
ST
TO-263-3
1000
150 V, 2 x 20 A high-voltage Schottky rectifiers for automotive applications
ST
LCC-2B
1000
Schottky Diodes and Rectifiers Aerospace 45 V Power Schottky Rectifiers - Engineering Models
ST
TO-263-3
1000
Schottky Diodes and Rectifiers Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diodes
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