sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:ST
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 5000pcs
The STW35N60DM2 High voltage N-channel power MOSFETs are part of the MDmesh™ DM2 fast recovery diode family. It has very low recovery charge (Qrr) and time (trr) and low RDS (on), making it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Specifications of STW35N60DM2
Product category: MOSFET
RoHS: Details
Technology: Si
Installation style: Through Hole
Package/housing: TO-247-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 600 V
Id- Continuous drain current: 28 A
Rds On- drain-source on-resistance: 110 mOhms
Vgs - grid - source voltage: -25 V, + 25 V
Vgs TH-gate source threshold voltage: 3 V
Qg- Grid charge: 54 nC
Operating temperature: -55 °C to + 150°C
Pd- Power dissipation: 210 W
Channel mode: Enhancement
Brand name: MDmesh
Package: Tube
Trademark: STMicroelectronics
Configuration: Single
Descent time: 10.7ns
Product type: MOSFETs
Rise time: 17 ns
Series: STW35N60DM2
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150V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
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