sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NXH010P90MNF1PTG
Data Manual:NXH010P90MNF1PTG.PDF
Brand:ON
Particular Year:23+
Package:Module
Delivery Date:New and Original
Stock: 1000pcs
The NXH010P90MNF1PTG SiC module contains a 10mΩ 900V SiC MOSFET half bridge and an NTC thermistor in the F1 module. The recommended gate voltage for this module is 15 V to 18 V. It has improved RDS(ON) at higher voltages and low thermal resistance.
Product Properties
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Dual) Common Source
Drain-Source Voltage (Vdss): 900V
Current at 25°C - Continuous Drain (Id): 154A (Tc)
On Resistance (Max) at Different Id, Vgs: 14 milliohms @ 100A, 15V
Vgs(th) at varying Id (max): 4.3V @ 40mA
Gate Charge (Qg) at Vgs (max): 546.4nC @ 15V
Input Capacitance (Ciss) at varying Vds (max): 7007pF @ 450V
Power - Max: 328W (Tj)
Operating Temperature: -40°C ~ 150°C (Tj)
Mounting Type: Chassis Mount
Package/Housing: Module
Applications
● Solar inverters
● Uninterruptible Power Supplies
● Electric vehicle charging stations
● Industrial power supplies
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A: You can inquire through the website, or by phone and email.
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