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The ON Semiconductor FGH4L50T65MQDC50 650V field terminated medium speed IGBT features 4th generation field terminated IGBT technology and 1.5 SIC Schottky diode technology.  

The FGH4L50T65MQDC50 is available in a compact TO-247 4-pin package. The device improves efficiency by minimising conduction and switching losses. The device is designed for use in a variety of applications.

Product Attributes

Manufacturer: onsemi

Product Category: IGBT Transistors

Package / Case: TO-247-4LD

Mounting Style: Through Hole

Configuration: Single

Maximum collector-emitter voltage VCEO: 650 V

Collector-emitter saturation voltage: 1.45 V

Gate/Emitter Maximum Voltage: - 20 V, + 20 V

Continuous collector current at 25 C: 100 A

Pd-power dissipation: 246 W

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Series: FGH4L50T65MQDC50

Maximum continuous collector current Ic: 100 A

Applications

Charging stations (EVSE)

Solar inverters

UPS, ESS

PFC, Converters

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