sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFETs
Brand:INFINEON
Particular Year:25+
Package:PG-HDSOP-16
Delivery Date:New and Original
Stock: 2000pcs
IMSQ120R026M2HH CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-side cooled devices enable a more optimized PCB layout, which in turn reduces the effects of parasitic components and stray inductances, while also providing enhanced thermal management capabilities.
The top-side cooled Q-DPAK Dual half-bridge package is introducing a new era in cooling, energy efficiency, design flexibility and performance.
Features Of IMSQ120R026M2HH
VDSS = 1200 V at Tvj = 25°C
IDDC = 59 A at TC = 100°C
RDS(on) = 25 mΩ, VGS = 18 V, Tvj = 25°C
Very low switching losses
Overload operation up to Tvj = 200°C
Short circuit withstand time 2 µs
Benchmark gate threshold voltage 4.2 V
Robust against parasitic turn on
Robust body diode for hard commutation
.XT interconnection technology
Benefits Of IMSQ120R026M2HH
Higher power density
Enabling automated assembly
Less complex designs needed
Outstanding thermal performance vs BSC
Improve system power losses
Enable a VRMS of 950 V with PD 2
Lower TCO cost or BOM cost
Applications Of IMSQ120R026M2HH
EV charging
General purpose motor drive
Servo motor drive and control
Photovoltaic
Online UPS
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