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Vishay has introduced a new 40 V TrenchFET fourth-generation n-channel power MOSFET-SIJK140E in PowerPAK 10x12 package, which offers superior on-resistance to deliver increased efficiency and power density for industrial applications. The Vishay Siliconix SiJK140E has a 32 percent reduction in on-resistance compared TO competing devices with the same footprint and 58 percent lower on-resistance than a 40 V MOSFET in the TO-263-7L package.

The device, announced today, has a typical on-resistance of as low as 0.34m  at 10 V, minimizing power loss due to conduction and thereby increasing efficiency, while improving thermal performance with RthJC as low as 0.21 °C/W typical values. The SiJK140E allows designers to use one device instead of two devices in parallel to achieve the same low on-resistance, resulting in increased reliability and extended mean time between failures (MTBF).

The MOSFET uses a wireless bonding (BWL) design that minimizes parasitic inductance while maximizing current capacity. The TO-263-7L solution in A wire bonding (BW) package is limited TO 200 A current, while the SiJK140E offers continuous drain current up to 795 A for increased power density while providing powerful SOA capabilities. Compared TO the TO-263-7L, the device's PowerPAK 10x12 package occupies 120 mm2, saving 27% PCB space while reducing thickness by 50%.

The SiJK140E is ideal for synchronous rectification, hot swap, and OR-ing functions. Typical applications include motor drive control, power tools, welding equipment, plasma cutters, battery management systems, robotics, and 3D printers. To avoid commonality among these products, a high threshold voltage of 2.4Vgs is provided for a standard grade FETs. Mosfets are RoHS compliant, halogen-free and 100% Rg and UIS tested.

Company website: www.hkmjd.com