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Power Transistor_IPA80R1K4P7_N-Channel_800V CoolMOS™ P7 Power MOSFET

Power Transistor_IPA80R1K4P7_N-Channel_800V CoolMOS™ P7 Power MOSFET

Source:our siteTime:2025-08-04Views:

Shenzhen Mingjiada Electronics Co., Ltd. supplies Infineon power transistors_IPA80R1K4P7_N-channel_800V CoolMOS™ P7 power MOSFET_a new benchmark for efficiency and thermal performanceProduct Overview The IPA80R1K4P7 is an 800V CoolMOS™ P7 series su…

Shenzhen Mingjiada Electronics Co., Ltd. supplies Infineon power transistors_IPA80R1K4P7_N-channel_800V CoolMOS™ P7 power MOSFET_a new benchmark for efficiency and thermal performance


Product Overview  

The IPA80R1K4P7 is an 800V CoolMOS™ P7 series super-junction MOSFET from Infineon, packaged in a TO-220-3 package, specifically optimized for low-power switch-mode power supply (SMPS) applications. This device is based on super-junction technology, offering low on-resistance, high switching efficiency, and excellent thermal performance, significantly enhancing system efficiency and power density.

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The IPA80R1K4P7 is primarily suited for flyback topology and is widely used in adapters, chargers, LED drivers, audio SMPS, industrial power supplies, and auxiliary power supplies, among other applications.


Core Features

Industry-leading FOM reduces switching losses and improves efficiency

Low on-resistance (1.4Ω @ 10V) minimizes power losses

3V gate threshold voltage with a minimum variation of ±0.5V for easy driving

Integrated Zener diode ESD protection (compliant with HBM Level 2 standards) enhances static discharge resistance

Optimized switching performance reduces Qg, minimizing switching losses

Industrial-grade reliability compliant with JEDEC standards, suitable for harsh environments


Performance advantages  

Compared to the previous-generation CoolMOS™ C3, efficiency improved by 0.6%, with MOSFET temperature reduced by 2°C to 8°C  

Supports higher power density designs, reducing BOM costs and assembly costs  

Easy to drive and parallel, simplifying circuit design  

Reduces ESD-related failures, improving production yield


IPA80R1K4P7 Parameters:

Maximum ID: 4 A

Maximum ID (@25°C): 4 A

Maximum IDpuls: 8.9 A

Mounting method: THT  

Operating temperature: -55°C to 150°C  

Package: TO220 FullPAK  

Number of pins: 3 pins  

Polarity: N  

Ptot maximum: 24 W  

Qgd: 5 nC  

QG: 10 nC  

QG (typical value @10V): 10 nC

RDS (on) Maximum: 1400 mΩ  

RDS (on) (at 10V) Maximum: 1400 mΩ  

RthJA Maximum: 80 K/W  

RthJC Maximum: 5.1 K/W  

Rth: 5.1 K/W  

Special Feature: Cost-effective  

VDS Maximum: 800 V

VGS(th): 3 V


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