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TI power switch LM74900QRGERQ1 5A, automotive ideal diode

TI power switch LM74900QRGERQ1 5A, automotive ideal diode

Source:our siteTime:2024-07-06Views:

The LM74900QRGERQ1 device is an automotive ideal diode with circuit breakers, undervoltage and overvoltage protection, and fault output.Overview:The LM749x0-Q1 ideal diode controller drives and controls external back-to-back n-channel MOSFETs to simul…

The LM74900QRGERQ1 device is an automotive ideal diode with circuit breakers, undervoltage and overvoltage protection, and fault output.


Overview:

The LM749x0-Q1 ideal diode controller drives and controls external back-to-back n-channel MOSFETs to simulate ideal diode rectifiers with power path on/off control and overcurrent and overvoltage protection. A wide input supply voltage of 3V to 65V protects and controls 12V and 24V automotive battery-powered ECUs. The device can withstand and protect loads from negative supply voltages as low as -65V. The integrated Ideal Diode Controller (DGATE) drives the first MOSFET in place of the Schottky diode for reverse input protection and output voltage retention.


In cases where a second MOSFET is used in the power supply path, the device allows the load to be disconnected (on/off control) using HGATE control in the event of overcurrent and overvoltage events. The device features an integrated current detection amplifier that provides accurate current monitoring with adjustable overcurrent and short circuit thresholds. The device has an adjustable overvoltage cut-off protection function. The device has a sleep mode that enables ultra-low static current consumption (6µA) while providing a refresh current for alway on loads while the vehicle is parked. The LM749x0-Q1 has a maximum rated voltage of 65V.


LM74900QRGERQ1 Features

• Complies with AEC-Q100 standard for automotive applications

- Device temperature Class 1:

Ambient operating temperature range - 40°C to +125°C

• Functional safety

- Documentation for functional safety system design is available

• 3V to 65V input range

• Reverse input protection as low as -65 V

• Drive external back-to-back n-channel MOSFETs in a common drain configuration

• 10.5mV anode to cathode forward voltage drop modulation, ideal diode normal operation

• Low reverse detection threshold (-10.5mV) with fast turn-off response (0.5µs)

• The 20mA peak gate (DGATE) conducts the current

• 2.6A peak DGATE shutdown current

• Adjustable overcurrent and short circuit protection

• Analog current monitor output (IMON) with 10% accuracy

• Adjustable overvoltage and undervoltage protection

2.5µA low turn-off current (EN = low)

• SLEEP mode, current is 6µA (EN= high, SLEEP= low)

• Suitable TVS diodes are used to meet automotive ISO7637 transient requirements

• Space-saving 24-pin VQFN package


LM74900QRGERQ1 Application

• Car battery protection

- ADAS domain controller

- Infotainment system and instrument group

- Automotive audio: external amplifier

• Active ORing for redundant power supplies


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