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Service Telephone:86-755-83294757
Infineon F4-33MR12W1M1H-B76 1200 V CoolSiC™ MOSFET Fore PACK H-Bridge Module
Shenzhen Mingjiada Electronics Co., Ltd. introduces Infineon F4-33MR12W1M1H-B76 1200 V CoolSiC™ MOSFET Fore PACK H-Bridge Module in new original packagingIntroducing the F4-33MR12W1M1H-B76This is a first generation 1200 V, 33 mΩ EasyPACK™ 1B CoolSi…
Shenzhen Mingjiada Electronics Co., Ltd. introduces Infineon F4-33MR12W1M1H-B76 1200 V CoolSiC™ MOSFET Fore PACK H-Bridge Module in new original packaging
Introducing the F4-33MR12W1M1H-B76
This is a first generation 1200 V, 33 mΩ EasyPACK™ 1B CoolSiC™ MOSFET Fore PACK H-bridge module with NTC temperature sensor and PressFIT crimp technology.
Feature Description
Outstanding package, up to 12 mm in height
Advanced wide bandgap (WBG) semiconductor materials
Very low module stray inductance
Enhanced first generation CoolSiC™ MOSFETs
Larger gate drive voltage range
Gate source voltage: +23 V and -10 V
Operating junction temperature (Tvjop): up to 175°C under overload conditions
PressFIT crimp pins
Integrated NTC temperature sensor
Advantages
Excellent module efficiency
System cost advantages
Improved system efficiency
Reduced heat dissipation requirements
Enables higher frequencies
Increased power density
Application Areas
Uninterruptible Power Supplies (UPS)
Energy storage systems
Electric Vehicle Fast Charging
Solar System Solutions
Company Home: www.hkmjd.com
Time:2024-11-20
Time:2024-11-20
Time:2024-11-20
Time:2024-11-20
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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