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Overview

The LMG3526R050RQSR 650V GaN FET features an integrated driver and protection for switch-mode power converters, allowing designers to achieve higher levels of power density and efficiency. The LMG3526R050 integrates a silicon driver to achieve switching speeds of up to 150V/ns. TI's integrated precision gate bias enables a higher switching SOA than discrete silicon gate drivers. This integrated feature, combined with TI's low-inductance packaging technology, provides ultra-small ringing and clean switching in hard switching power supply topologies. The adjustable grid drive strength allows the swing rate to be controlled between 15V/ns and 150V/ns. This can be used to actively control EMI and optimize switching performance.

Features

650V gallium nitride field-effect transistor (FET) on silicon with integrated gate driver

Integrated high precision grid bias voltage

200V/ns FET release

3.6MHz switching frequency

15V/ns to 150V/ns conversion rate for optimizing switching performance and mitigating EMI

Operates on 7.5V to 18V power supply

Advanced power management

Digital temperature PWM output

It is helpful to realize the zero voltage detection function of soft switching converter

Powerful protection function

Cyclic overcurrent and latched short circuit protection with response time less than 100ns

Withstand 720 V surge when hard switched

Self-protection against internal overheating and UVLO monitoring

The top-cooled 12mm x 12mm VQFN package separates the electrical and thermal paths to achieve the lowest power loop inductance

Applications

• Switching mode power converter

• Merchant network and server PSU

• Commercial electrical credit rectifier

• Solar inverters and industrial motor drives

• Uninterruptible power supply

Contact: Mr. Chen

Tel: +8613410018555

Email: sales@hkmjd.com