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VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

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DMWS120H100SM4 1200V N channel Silicon carbide power MOSFET

DMWS120H100SM4 1200V N channel Silicon carbide power MOSFET

Source:our siteTime:2024-06-11Views:

DMWS120H100SM4 1200V N-channel Silicon Carbide power MOSFETs are designed to minimize on-resistance while maintaining superior switching performance.

Overview:

DMWS120H100SM4 1200V N-channel Silicon Carbide (SiC) power MOSFETs are designed to minimize on-resistance while maintaining superior switching performance. It enables high density and high efficiency in industrial motor drives, photovoltaic energy systems, DC-DC converters, and data center and telecommunications power supplies. The device's low on-resistance, combined with the total gate charge (Qg) at 52nC 15V gate drive, enables system designers to maximize efficiency while ensuring minimal power dissipation. The TO247-4 package includes an additional Kelvin temperature detection pin in the fourth lead connected to the source, providing the ability to optimize switching performance. The DMWS120H100SM4 is AEC-Q101 compliant and is manufactured in an IATF 16949 certified facility with a junction temperature (TJ) rating of +150° C.


Features

Low on-resistance

High BVDSS rating for power applications

Low input capacitance

Lead-free surface treatment; Comply with RoHS directive

Halogen-free antimony free, green device


Specifications

The encapsulation type is TO247-4

The packaging material is moulded plastic, green mould composite material

UL Flammability Grade: 94V-0

Terminal mist tin surface treatment, annealed through copper lead frame

Welding can be performed according to MIL-STD-202 method 208

Weight: 6.6g (approximate)


Applications

Data center and telecom power

Industrial motor driver

Dc-dc converter

Solar inverter

Electric car battery charger


Pin diagram

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Contact: Mr. Chen

Tel: +8613410018555

Email: sales@hkmjd.com


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