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High frequency, high efficiency and high reliability - Renesas gallium nitride (GaN) power discrete devices are reshaping the game rules in the power electronics industry.

Shenzhen Mingjiada Electronics Co., Ltd. takes direct supply from the original factory, global inventory and ultra-fast delivery as its core, accelerating the application of cutting-edge GaN technology from the laboratory to new energy vehicles, AI data centers and aerospace power systems.

I. Revolutionary Significance of GaN Technology: The "Efficiency Engine" of Third-Generation Semiconductors

Gallium nitride (GaN), as a third-generation semiconductor material, has achieved three breakthrough advantages with its wide bandgap characteristic (3.4eV, far exceeding silicon-based 1.1eV) :

High-frequency switching capability: The operating frequency can reach the MHz level, which is 10 times higher than that of traditional silicon-based MOSFETs, significantly reducing the volume of inductors/capacitors.

Energy efficiency leap: On-resistance (RDS(on)) is reduced by over 50%, system efficiency is increased to 98%, and energy loss is reduced.

Thermal management innovation: High-temperature stability above 200℃, compatible with high-density power supply design, reducing heat dissipation costs by 30%.

Under the technological leadership of Renesas, its GaN HEMT (High Electron Mobility Transistor) devices have cumulatively shipped over 20 million units and have cumulatively operated for over 300 billion hours, verifying the ultimate reliability of both industrial and automotive grades.

Ii. GaN Product Matrix supplied by Mingjiada: Covering all power scenarios

Mingjiada, relying on Renesas' original factory channels and its own global warehouses, offers a full range of GaN power discrete devices to meet power demands ranging from 25W to 10kW.

1. Flagship model of high-voltage GaN FET

650V/700V high-voltage platform: such as TP65H030G4PRS/WS/QS series, supporting 100kHz high-frequency switching, compatible with electric vehicle OBC (on-board charger) and photovoltaic inverters;

Ultra-low on-loss models: such as TP65H015G5WS (on-resistance 15mΩ), specifically optimized for 48V DC power supplies for AI servers, with a 40% increase in power density.

High current models: such as TP70H480G4JSGB (480A), used for bidirectional DC-DC conversion in energy storage systems (ESS).

2. Special application GaN solutions

Anti-radiation driver: ISL71040M has been certified by MIL-STD-883, supporting the stable operation of satellite power systems in the space radiation environment.

Rf power modules: such as the MC-7802 CATV amplifier, provide high linear output and reduce signal distortion in 5G base stations.

Iii. Panoramic View of Application Scenarios: The Energy Revolution from the Ground to Space

The GaN devices supplied by Mingjiada have been deeply integrated into four core areas:

New energy vehicles: 800V high-voltage platform on-board charger (OBC), with charging speed increased by three times, achieves 95% energy efficiency when paired with the TP65H030G4 series.

AI Data center: The 48V DC power supply system adopts TP65H050G4YS, reducing the power supply volume by 60% and supporting a high-density computing power of 10kW per rack.

Industrial energy: TP70H300G4LSGB is applied in photovoltaic inverters and energy storage systems (ESS), with a conversion efficiency exceeding 99% and a life cycle extended to 25 years.

Aerospace and military industry: The anti-radiation GaN driver ISL71040M is used for low-orbit satellite power supply, capable of withstanding a radiation dose of 100 krAD, with reliability improved by 10 times.

Four. Mingjiada's Four major supply Advantages: Solving Industry pain points

1. Original genuine product traceability system

All components are guaranteed to be sourced from Renesas' original factory and authorized channels, with original factory packaging and batch codes provided to eliminate the risks of refurbishment and counterfeiting.

2. Global spot market responds at an extremely fast pace

The dual warehouses in Shenzhen and Hong Kong always keep over 200 (Renesas) GaN models in stock, including rare automotive-grade and radiation-resistant devices.

We support 24-hour lightning delivery. Domestic orders will be delivered within 48 hours and cross-border orders within 72 hours (relying on Hong Kong/Japan transfer warehouses).

3. Flexible procurement strategies

R&d support: Provide small-batch samples (minimum order 1 piece) to accelerate prototype verification;

Mass production guarantee: The price for large orders is 5%-20% lower than the market price, and it supports VMI (Vendor Managed Inventory) and quarterly contracts.

Act now and seize the efficiency dividend of GaN

Sales Hotline: +86 13410018555 (Mr. Chen)

Model inquiry email: sales@hkmjd.com

Real-time inventory inquiry on the official website: www.hkmjd.com