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ADI HMC441LC3BTR GaAs pHEMT MMIC Medium Power Amplifier

Shenzhen Mingjiada Electronics Co., Ltd., as a globally renowned distributor of electronic components, has been supplying ADI's HMC441LC3BTR gallium arsenide pHEMT MMIC medium-power amplifier. This high-performance RF device demonstrates exceptional electrical characteristics across the 6GHz to 18GHz frequency band, finding widespread application in point-to-point radio systems, VSAT systems, military electronic warfare equipment, and other high-end fields.

Product Overview and Technical Specifications of the HMC441LC3BTR:

The HMC441LC3BTR is a high-efficiency gallium arsenide pHEMT (pseudo-shaped high electron mobility transistor) MMIC (monolithic microwave integrated circuit) medium-power amplifier, featuring a lead-free surface-mount package compliant with RoHS standards. This HMC441LC3BTR product is renowned in the RF amplifier field for its outstanding performance metrics and broad application adaptability.

In terms of packaging, the HMC441LC3BTR adopts a 12-VFCQFN (12-pin exposed-pad quad flat no-lead) package with a compact size of 3x3mm, aligning with the modern trend toward miniaturisation and high integration in electronic device design. This packaging not only offers excellent thermal performance for efficient heat management but is also compatible with high-volume surface-mount manufacturing processes, significantly simplifying production workflows.

The main technical parameters of the HMC441LC3BTR include:

Operating frequency range: 6 GHz to 18 GHz, covering the C-band, X-band, and Ku-band

Gain: 14 dB (typical), providing stable signal amplification capability

Saturated output power: +21.5 dBm (approximately 141 mW), suitable for medium-power application scenarios

Power added efficiency (PAE): 27%, outperforming comparable products in energy efficiency

1dB compression point output power (P1dB): 20dBm, ensuring a sufficiently wide linear operating region

Noise figure: 4.5dB, among the lowest levels in power amplifiers

Operating voltage: Single 5V power supply, simplifying system power design

Operating current: 115mA, with reasonable power consumption control

A significant design advantage of the HMC441LC3BTR is its fully integrated 50-ohm matching network, meaning engineers do not need to design complex impedance matching circuits or use external components when applying this device, greatly simplifying the RF system design process, reducing development complexity, and lowering BOM costs. Both input and output ports feature DC blocking design, further facilitating system integration.

Performance features and design advantages of the HMC441LC3BTR:

As a medium-power amplifier based on gallium arsenide pHEMT technology, the HMC441LC3BTR offers multiple advantages in terms of RF performance, integration, and reliability, making it an ideal choice for high-frequency applications.

Wideband performance is one of the most prominent features of the HMC441LC3BTR amplifier. The continuous operating frequency band from 6 GHz to 18 GHz covers multiple important RF frequency bands, including the C-band (4-8 GHz), X-band (8-12 GHz), and Ku-band (12-18 GHz). This wideband capability allows a single device to meet the needs of multiple applications, significantly reducing the complexity of frequency band switching in system design while also lowering material management and inventory costs.

In terms of power performance, the HMC441LC3BTR offers +21.5dBm saturated output power and 20dBm 1dB compression point output power, combined with 14dB gain, making it an excellent linear gain block or driver. The 27% power added efficiency (PAE) is outstanding, meaning more DC power is converted into useful RF output power, reducing system thermal dissipation requirements. Compared to traditional silicon-based amplifiers, this device based on gallium arsenide pHEMT technology offers significant advantages in terms of efficiency, frequency characteristics, and temperature stability.

System integration convenience is another key highlight of the HMC441LC3BTR. The fully integrated 50-ohm input/output matching eliminates the need for external matching network design, while the DC-blocked input/output ports simplify bias circuit design. The surface-mount package (SMT) is fully compatible with modern PCB assembly processes. These features collectively make the device a ‘plug-and-play’ RF solution, significantly reducing product development cycles.

From a reliability perspective, the gallium arsenide pHEMT technology itself offers high-temperature operating capability and excellent radiation resistance. Combined with ADI's rigorous quality control system, this ensures the HMC441LC3BTR operates reliably in harsh environments. Mingjiada Electronics, as an authorised distributor, guarantees that every device supplied is genuine factory-direct and provides complete quality traceability services.

Typical application areas for the HMC441LC3BTR:

In point-to-point radio communication systems, the HMC441LC3BTR is commonly used as a driver amplifier in the intermediate frequency (IF) or radio frequency (RF) bands. Its wide bandwidth characteristics are particularly suitable for microwave link systems operating across multiple frequency bands, while its excellent linearity ensures high-quality transmission of high-order modulated signals such as 256QAM or 1024QAM. A gain of 14 dB effectively compensates for transmission path losses, enhancing the system's overall signal-to-noise ratio.

Satellite communication systems, particularly VSAT (Very Small Aperture Terminal) equipment, represent another key application scenario for this amplifier. In Ku-band (12-18 GHz) satellite communications, the HMC441LC3BTR can serve as a power drive stage following an upconverter or as a gain stage following a low-noise amplifier in the downlink. Its stable performance and compact packaging make it particularly suitable for space-constrained VSAT terminal equipment.

Military electronic systems have a sustained demand for the HMC441LC3BTR. In electronic warfare (EW) and electronic countermeasure (ECM) equipment, this amplifier can be used in interference signal generation chains or receiver front ends. Its wideband characteristics enable it to cover multiple threat frequencies, while the inherent radiation resistance of gallium arsenide (GaAs) technology enhances reliability in harsh electromagnetic environments.

Additionally, the HMC441LC3BTR is highly suitable for use as a local oscillator (LO) driver for mixers. In superheterodyne receiver architectures, driving the mixer's LO port requires sufficient power to ensure good conversion efficiency, while also demanding low phase noise to avoid degrading system noise performance. The amplifier's high linearity and moderate power level make it an ideal choice for LO driving.

In test and measurement equipment, the HMC441LC3BTR can serve as a supplementary amplifier for the signal source output stage or provide the necessary gain in the receive channel. The wide bandwidth coverage from 6 to 18 GHz reduces the number of amplifiers required in the test system, simplifying instrument design.