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Shenzhen Mingjiada Electronics Co., Ltd. supply MOSFET IGOT60R070D1AUMA1 N channel 600 V 31A(Tc) 125W(Tc) PG-DSO-20-87

Manufacturer: Infineon Technologies  

Series: CoolGaN™  

FET Type: N-Channel  

Technology: GaNFET (Gallium Nitride)  

Drain-Source Voltage (Vdss): 600 V  

Current at 25°C - Continuous Drain (Id): 31A (Tc)  

Vgs(th) (max) at different Id: 1,6V @ 2,6mA  

Vgs(th) (max): 1,6V @ 2,6mA at various Id's  

Input capacitance (Ciss) at different Vds (max): 380 pF @ 400 V  

Power Dissipation (Max): 125W (Tc)  

Operating Temperature: -55°C ~ 150°C (TJ)  

Mounting Type: Surface Mount  

Supplier Device Package: PG-DSO-20-87  

Package/Housing: 20-PowerSOIC (0.433", 11.00mm Width)

Introduction

The target applications for the CoolGaN family of products require enhanced (normally-off) HEMT devices, which offer greater advantages in typical power conversion applications because they require less power to operate.Most of the operational advantages of CoolGaN HEMT devices come from their ability to switch at ultra-high frequency rates, but this is a characteristic that can be affected by the parasitic resistance of the package leads. For this reason, CoolGaN devices are packaged using SMD (surface mount device) technology rather than through-hole packaging.

CoolGaN technology allows the integration of ESD protection diodes using "the same fabrication process as for HEMT transistors".GaN and AlGaN layers are obtained by epitaxial deposition on a silicon substrate. The enhanced power GaN transistors have a p-HEMT structure. Novel and unique field plate structures are obtained by processing in metal layers.

If you are interested, please feel free to contact Mr Chen by phone:

Tel: +86 13410018555

Email: sales@hkmjd.com

Company website: www.hkmjd.com