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(Supply) Transistors IGT60R070D1ATMA4 and IGO60R070D1AUMA1 CoolGaN™ Gallium Nitride HEMTs

(Supply) Transistors IGT60R070D1ATMA4 and IGO60R070D1AUMA1 CoolGaN™ Gallium Nitride HEMTs

Source:our siteTime:2024-03-11Views:

Shenzhen Mingjiada Electronics Co., Ltd (Supply) Transistors IGT60R070D1ATMA4 and IGO60R070D1AUMA1 CoolGaN™ Gallium Nitride HEMTsDescriptionInfineon CoolGaN™ Gallium Nitride HEMTs offer a number of advantages including ultra-high efficiency, reliabi…

Shenzhen Mingjiada Electronics Co., Ltd (Supply) Transistors IGT60R070D1ATMA4 and IGO60R070D1AUMA1 CoolGaN™ Gallium Nitride HEMTs


Description

Infineon CoolGaN™ Gallium Nitride HEMTs offer a number of advantages including ultra-high efficiency, reliability, power density, and very high mass relative to silicon.CoolGaN transistors are based on an extremely reliable technology and are designed to achieve ultra-high efficiency and power density in switch-mode power supplies. These devices operate in a manner similar to conventional silicon MOSFETs with p-GaN gate structures and enhanced mode gate drive biasing.


Infineon CoolGaN's superior quality makes it ideally suited for both hard and soft switching topologies. coolGaN supports the tuning of simpler half-bridge topologies for PFC, including the elimination of lossy input bridge rectifiers. coolGaN HEMTs provide power semiconductor devices with higher critical electric fields for superior high-speed switching.


Features

Quality factor for 600V power devices

Ideal for hard and soft switching topologies

Up to three times higher power density

Optimised turn-on and turn-off modes

Technology for innovative solutions and large capacities

Ultra-high efficiency of SMPS

Surface mount package ensures full access to GaN switching capability

Varied portfolio of driver ICs for ease of use


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Servers

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Wireless charging

Adapters and chargers


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