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Shenzhen Mingjiada Electronics Co.,Ltd.Supply MOSFET IGLD60R190D1AUMA1_IGLD60R070D1AUMA3 600V CoolGaN™ Enhanced Power Transistor

Product Description

1、IGLD60R190D1AUMA1 Surface Mount N-Channel 600 V 10A(Tc) 62.5W(Tc) PG-LSON-8-1

Series: CoolGaN™ FET Type: N-Channel  

FET Type: N-Channel  

Technology: GaNFET (Gallium Nitride)  

Drain-Source Voltage (Vdss): 600 V  

Current at 25°C - Continuous Drain (Id): 10A (Tc)  

Vgs(th) at different Id (max): 1,6V @ 960µA  

Vgs(th) (max): 1,6V @ 960µA at different Id's  

Input capacitance (Ciss) (max) at different Vds: 157 pF @ 400 V  

Power Dissipation (Max): 62.5W (Tc)  

Operating Temperature: -55°C ~ 150°C (TJ)  

Mounting Type: Surface Mount  

Supplier Device Package: PG-LSON-8-1  

Package/Shell: 8-LDFN Exposed Pad  

Base Product Number: IGLD60

2, IGLD60R070D1AUMA3 Surface Mount N-Channel 600 V 15A (Tc) 114W (Tc) PG-LSON-8-1

Series CoolGaN™     

FET: Type N-Channel  

Technology: GaNFET (Gallium Nitride)  

Drain-Source Voltage (Vdss): 600 V  

Current at 25°C - Continuous Drain (Id): 15A (Tc)  

Vgs(th) at different Id (max): 1,6V @ 2,6mA  

Vgs(max): -10V  

Input capacitance (Ciss) at different Vds (max): 380 pF @ 400 V  

Power Dissipation (Max): 114W (Tc)  

Operating Temperature: -55°C ~ 150°C (TJ)  

Mounting Type: Surface Mount  

Supplier Device Package: PG-LSON-8-1  

Package/Shell: 8-LDFN Exposed Pad

Introduction

The CoolGaN™600V enhancement power transistors provide fast switching speeds and minimal switching losses in a simple half-bridge topology for maximum efficiency.

The CoolGaN™ 600V family meets comprehensive GaN-specific approvals that go well beyond existing standards. It is targeted at datacom and server switching power supplies, telecom and adapters, chargers, wireless charging, and other applications requiring the highest efficiency or power density.

For further information, please feel free to contact Mr Chen by phone:

Tel: +86 13410018555

Email: sales@hkmjd.com

Company Home：http://www.hkmjd.com/