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Shenzhen Mingjiada Electronics Co., Ltd. supplies Infineon Technologies Discrete Semiconductors IGLR60R190D1XUMA1 CoolGaN™ 600V Gate Injection Technology (GIT) High Electron Mobility Transistors (HEMTs) with fast on and off speeds and minimal switching losses.

Introduction

This family of GaN enhancement mode power transistors is available in the ThinPAK 5x6 surface mount package and is ideal for applications requiring a compact device that does not require a heat sink. The Infineon Technologies CoolGaN™ 600V GIT HEMTs have a small size of 5mm x 6mm2 and a thin height of 1mm, making them ideally suited for achieving high power densities.

Features

Enhancement mode transistor, normally closed switch

GaN HEMT in small leadless SMD package

GaN custom certified

Ultra-fast switching speed

No reverse recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Excellent commutation tolerance

Improved system efficiency

Increased power density

Supports higher operating frequencies

Lower system cost

Reduced EMI

JEDEC compliant (JESD47 and JESD22) for industrial applications

Lead-free, halogen-free, RoHS compliant

Technical Data

Product Category: MOSFETs

Technology: GaN

Mounting Style: SMD/SMT

Package / Case: TSON-8

Transistor polarity: N-Channel

Number of Channels: 1 Channel

Vds - drain-source breakdown voltage: 800 V

Id-Continuous drain current: 12.8 A

Rds On-drain on-resistance: 190 mOhms

Vgs - gate-source voltage: - 10 V, + 10 V

Vgs th-Gate-source threshold voltage: 900 mV

Qg-gate charge: 3.2 nC

Minimum operating temperature: - 40 C

Maximum operating temperature: + 150 C

Pd-power dissipation: 55.5 W

Channel mode: Enhancement

Trademark: CoolGaN

Series: CoolGaN 600V

Configuration: Single

Fall time: 14 ns

Rise Time: 12 ns

Typical Off Delay Time: 13 ns

Typical turn-on delay time: 16 ns

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