Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

Supply ROHM SiC Power Devices:SiC Schottky Barrier Diodes,SiC MOSFETs,SiC Power Module

Shenzhen Mingjiada Electronics Co., Ltd. is a comprehensive enterprise specializing in electronic component supply chain services. The company has over one million inventory advantage models of electronic components, which can quickly respond to customer needs; We have established a warehousing and logistics network covering Shenzhen, Hong Kong, and other places, supporting an efficient delivery model of "same day ordering, next day shipping".

Main business: a series of products including integrated circuit ICs, 5G chips, new energy ICs, IoT chips, Bluetooth chips, automotive chips, artificial intelligence ICs, Ethernet ICs, memory chips, sensors, IGBT modules, etc.

ROHM SiC Schottky Barrier Diode (SBD) Product Line

Silicon carbide Schottky barrier diodes (SiC SBDs), as an important member of the ROHM SiC power device family, play a crucial role in efficient power supply design due to their zero reverse recovery current and excellent high-temperature stability. Compared with traditional silicon-based fast recovery diodes (FRDs), ROHM SiC SBDs have significant advantages in switching losses and high-temperature performance, making them particularly suitable for applications such as high-frequency switching power supplies, photovoltaic inverters, and electric vehicle chargers.

Typical applications of ROHM SiC SBD include:

PFC (Power Factor Correction) circuit: Utilizing the high-frequency characteristics of SiC SBD, it can significantly improve PFC stage efficiency and reduce system volume

Solar inverter: reducing conduction losses in MPPT (maximum power point tracking) and DC-AC conversion stages

Electric vehicle OBC (on-board charger): Improve charging efficiency, reduce heat dissipation system volume and weight

Server power supply: Achieve titanium grade energy efficiency standards and reduce data center operating costs

Characteristics and Supply Advantages of ROHM SiC MOSFET Technology

ROHM SiC MOSFET represents the cutting-edge level of power semiconductor technology. Compared with traditional silicon-based MOSFETs, ROHM SiC MOSFET has lower on resistance (Rds (on)), higher switching frequency, and excellent high-temperature operation capability, and system efficiency can be improved to over 98%.

SiC MOSFET devices are particularly suitable for applications in:

High frequency switching power supply: supports MHz level switching frequency, significantly reducing the volume of passive components

Industrial motor drive: improve energy efficiency level and reduce system operating costs

New energy generation system: improving the energy conversion efficiency of photovoltaic/wind power converters

Lidar system: achieving fast and accurate power pulse control

Integrated solution for ROHM SiC power module

For high power density application scenarios, ROHM's full SiC power module integrates multiple SiC MOSFETs and SiC SBDs into a single package, providing a more complete system level solution. These modules adopt advanced low inductance packaging technology and optimized internal interconnect design, which can maximize the performance advantages of SiC devices.

The main features of ROHM full SiC power module include:

Ultra high switching speed: reduces switching losses and improves system efficiency

High temperature working ability: able to withstand temperatures up to 175 ° C and adapt to harsh environments

Compact design: power density increased by over 30% compared to silicon-based modules

Simplify system design: integrate driver and protection functions, reduce peripheral components