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Supply Littelfuse MOSFETs Product:Automotive MOSFETs,N-Channel MOSFETs,P-Channel MOSFETs,SiC MOSFETs

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Automotive MOSFET products and applications

With the increasing degree of automotive electronics, the demand for automotive-grade power devices has shown explosive growth. Automotive MOSFET product series strictly follow the AEC-Q101 certification standards, with high reliability, strong anti-interference ability and wide temperature operating range, etc., to fully meet the stringent requirements of modern automotive electronic systems.

Key Technical Characteristics

Wide temperature operating range: -55°C to +175°C (TJ) operating temperature range ensures stable operation under extreme climatic conditions and adapts to high-temperature environments such as engine compartments.

High vibration-resistant design: Adopting special packaging process and internal structure design, it passes the mechanical vibration and shock test to meet the vibration environment requirements in automobile driving.

Low on-resistance: Advanced trench gate technology achieves milliohm on-resistance (RDS(on)), significantly reducing conduction loss.

Enhanced thermal performance: 3x3mm flat leaded packages (e.g. WDFN) with wettable flank design saves space and improves thermal efficiency for compact automotive electronic modules.

N-Channel and P-Channel MOSFET Solutions

As the most fundamental power switching devices in electronic circuits, N-channel and P-channel MOSFETs play a key role in all types of power management and power conversion systems, and the Littelfuse MOSFET product line covers the full range of application requirements from low-voltage, small-signal to high-voltage, high-current, providing engineers with flexible options.

Key technical features of N-channel MOSFETs include:

Wide voltage range coverage: from 30V to 1000V multiple voltage levels are available to meet the needs of most low and medium voltage applications.

Low conduction loss: Advanced trench gate technology with typical RDS(on) values down to the milliohm level significantly reduces on-state power loss and improves system efficiency.

Fast switching characteristics: Optimised gate structure and low gate charge (Qg) design supports high-frequency switching operation (up to 2.2MHz) for topologies such as LLC resonant converters.

Versatile package options: from miniature DFN (3x3mm) to power TO-247 to meet design requirements for different power levels and space constraints.

P-channel MOSFET Application Features

Simplified Driver Circuitry: In high-end switching applications, P-channel MOSFETs can be driven directly by logic levels without the need for additional charge pumps or gate driver ICs, simplifying circuit design.

Negative Voltage System Support: Suitable for scenarios such as powering audio amplifiers and operational amplifiers that require negative power rails, providing a simple power switching solution.

Redundant Design for Enhanced Reliability: In critical power paths, the N+P-channel combination builds a more robust back-to-back switching structure, preventing accidental conduction and current backflow.

SiC MOSFET Technology and Application Breakthroughs

SiC MOSFETs, representing the third generation of semiconductor power devices, are revolutionising the design paradigm for high-voltage, high-temperature, and high-frequency power electronics systems. the Littelfuse SiC MOSFET family of products, with its superior material properties, offers unprecedented performance enhancements in areas such as new energy automotive, renewable energy, and industrial power supplies.

SiC Technology Advantage Analysis

Higher Breakdown Field Strength: The critical breakdown field strength of SiC materials is 10 times that of silicon, allowing for thinner drift layers and higher doping concentrations, resulting in lower on-resistance and smaller chip area.

Wider forbidden bandwidth: A bandgap of 3.26eV enables SiC devices to operate at junction temperatures up to 200°C or higher for high-temperature ambient applications while significantly reducing leakage current.

Higher Thermal Conductivity: SiC's thermal conductivity is three times that of silicon, facilitating heat transfer from the junction region to the package enclosure, improving power density and reliability.

Higher saturation electron drift speed: Supports ultra-high switching frequency, significantly reducing the size and weight of passive components .