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Recycle MACOM GaN Product:GaN MMICs,GaN Power Amplifiers

Shenzhen Mingjiada Electronics Co., Ltd., as China's leading electronic component recycling service provider, leverages its extensive industry experience and global recycling network to offer professional recycling services, helping clients optimise inventory assets and improve cash flow.

Recycled products include: 5G chips, new energy ICs, IoT ICs, Bluetooth ICs, vehicle networking ICs, automotive-grade ICs, communication ICs, artificial intelligence ICs, etc. Additionally, the company supplies memory ICs, sensor ICs, microcontroller ICs, transceiver ICs, Ethernet ICs, WiFi chips, wireless communication modules, connectors, and other electronic components.

Recycling process:

1. Consultation: If you have inventory electronic components that need to be disposed of, you can send an email listing the ICs/modules you wish to sell.

2. On-site Recycling: Our company will dispatch professional staff to collect your inventory electronic components on-site and conduct preliminary testing and classification of the components.

3. Quotation: The company will provide a corresponding recycling price based on factors such as the type, quantity, and quality of the recycled components.

4. Settlement: If both parties reach an agreement, specific transaction methods can be negotiated for delivery.

MACOM Gallium Nitride MMIC Products

MACOM's GaN MMIC product portfolio represents the cutting edge of industry performance. By adopting GaN-on-SiC (silicon carbide-based GaN) and GaN-on-Si (silicon-based GaN) process technologies, MACOM supports next-generation system architectures for applications ranging from phased array radars to satellite communications and precision test and measurement equipment.

MACOM's GaN MMIC products primarily include the following categories:

GaN Distributed Amplifiers

Ultra-wideband performance: covering DC to 40GHz or higher frequency bands, with excellent gain flatness (typical value within ±1dB), meeting the wideband requirements of applications such as electronic warfare, broadband communications, and test and measurement.

High power density: Leveraging the high breakdown voltage characteristics of GaN material, it delivers 3-5 times higher output power than traditional GaAs devices on the same chip area, with typical power density reaching 4-6 W/mm

Excellent linearity: OIP3 typically exceeds 35 dBm, suitable for high-fidelity amplification of complex modulated signals

Temperature stability: Built-in temperature sensing and compensation circuits ensure stable performance across a wide temperature range of -40°C to +85°C

Compact packaging: Primarily uses QFN or ceramic surface-mount packaging, with a compact size for easy system integration

Gallium Nitride Front-End Module

Highly integrated design: Single module integrates transmit/receive functions (LNA, PA, Switch, etc.), reducing board space and interconnect losses

Excellent power efficiency: Overall efficiency up to 30-45%, reducing system power consumption and thermal requirements

Wideband coverage: Supports multiple frequency band configurations from UHF to Ka band

High linear performance: Optimised circuit design ensures module linearity under complex modulated signals, with excellent ACLR and EVM metrics

Simplified system design: Built-in matching networks and bias circuits reduce the number of external components

These high-end GaN MMIC products are commonly found in 5G communication base stations (particularly large-scale MIMO active antenna systems in the millimetre wave band), military radar systems (TR modules for X-band and Ku-band phased array radars), satellite communication terminals (portable and vehicle-mounted devices), and electronic countermeasure equipment in critical applications.

MACOM GaN Power Amplifiers

GaN power amplifiers are the most technologically advanced and application-valued product category in MACOM's MMIC product line. These products fully leverage the high breakdown field strength and high electron saturation velocity characteristics of GaN material to achieve high power output and efficiency in the microwave frequency band that traditional semiconductor materials struggle to match.

Main Types of MACOM GaN Power Amplifiers:

Technical Performance Features

High Output Power: Achieves hundreds of watts of pulsed power output in the C-band and tens of watts of continuous wave power in the X-band, with power density significantly higher than GaAs and Si LDMOS devices

High efficiency operation: Utilises advanced technologies such as harmonic tuning and envelope tracking, achieving a power added efficiency (PAE) of 50-60%, significantly reducing system energy consumption

Wide bandwidth capability: Instantaneous bandwidth can reach 10-15% of the centre frequency, supporting wideband signal amplification and reducing the need for frequency band switching

High reliability: Mean time to failure (MTTF) exceeds 1 million hours, meeting the stringent requirements of aerospace and defence applications

Temperature stability: Junction temperature operating range up to 225°C, with minimal performance degradation at high temperatures, suitable for high power density applications

Typical application areas

Radar systems: Final-stage power amplification for military fire control radars, weather radars, and air traffic control radars, enhancing detection range and resolution

5G macro base stations: High-power remote radio units (RRUs) in the 3.5 GHz and 4.9 GHz bands, with GaN PAs offering high efficiency to reduce base station energy consumption and operational costs

Satellite communications: High-power amplifiers (HPAs) for ground stations, supporting high-throughput satellite communications in the Q/V bands

Electronic warfare systems: Core components for high-power jamming transmitters, enabling effective suppression of enemy communication and radar systems

Industrial heating: Power sources for microwave energy applications, used in material processing and food processing industries, among others