Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

Supply ON Silicon Carbide Product:SiC Diodes,SiC MOSFETs,SiC JFETs

Shenzhen Mingjiada Electronics Co., Ltd., as a leading global distributor of electronic components, leverages its robust supply chain network, professional services, competitive pricing, and trustworthy approach to provide customers with comprehensive electronic component solutions.

Main products include: 5G chips, new energy ICs, IoT ICs, Bluetooth ICs, vehicle networking ICs, automotive-grade ICs, communication ICs, artificial intelligence ICs, etc. Additionally, the company supplies memory ICs, sensor ICs, microcontroller ICs, transceiver ICs, Ethernet ICs, WiFi chips, wireless communication modules, connectors, and other electronic components.

Supply Advantages:  

1. Genuine Original Manufacturer Products:  

All products are sourced from original manufacturers or authorised channels.  

Complete original packaging is provided to eliminate the risk of refurbished or counterfeit products.  

2. Flexible Procurement Solutions:  

Sample orders are available starting from 1 piece to meet R&D phase requirements.  

Bulk orders enjoy tiered pricing discounts.

3. Efficient Logistics System:  

Shenzhen central warehouse maintains stock inventory, with 98% of orders shipped within 48 hours  

Hong Kong bonded warehouse supports global DDP door-to-door logistics services  

Emergency orders can utilise air freight dedicated lines to ensure critical material supply

Silicon Carbide (SiC) Diodes

Silicon Carbide diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.

Compared to silicon diodes, silicon carbide diodes are more efficient and resistant to high temperatures. They work at high frequencies and higher voltages. Since SiC diodes have faster recovery times than silicon diodes, they're ideal for any kind of current that requires a quick transition from blocking to conducting stages. They also don't get as hot as silicon, allowing them to be used in higher-temperature applications with more efficiency.

Silicon Carbide (SiC) MOSFETs

SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

Silicon Carbide (SiC) JFETs

SiC JFETs are high-performance, normally-on JFET transistors with VDS-max ranging from 650V to 1700V. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 4 mohm, utilizing less than half the die size of any other technology. Additionally low gate charge (Qg) enables further reductions in both conduction and switching losses. SiC JFETs are optimized for one of the uses in Power Supply Units (PSUs) and downstream high-voltage DC-DC conversion to handle the enormous power requirements of future AI Data Center Racks. In addition, they improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFETs in EV battery disconnect units. Furthermore, they enable certain Energy Storage topologies and Solid-State Circuit Breakers (SSCBs).