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Mingjiada Electronics Co., Ltd. is now supplying A2T21H410-24SR6 RF Metal Oxide Semiconductor Field Effect Transistor (RF MOSFET).

Product Description: A2T21H410-24SR6

The A2T21H410-24SR6 is a 72W asymmetric Doherty RF power LDMOS transistor with an operating frequency range of 2110 to 2170MHz designed for cellular base station applications. It features advanced, high-performance, internally packaged Doherty technology, increased negative gate-source voltage range, improved Class C amplifier operation, and RoHS compliance.

Core Features

1. Excellent high frequency performance

Operating frequency range: 1MHz-2500MHz

Output power: 21W (typical @ 28V, 175MHz)

Power Gain: 19dB (Typ)

Efficiency: 70% (typical)

2. Excellent electrical characteristics

Drain-source voltage (VDS): 65V

Gate source voltage (VGS): ±20V

Continuous drain current (ID): 4A

Pulse drain current (IDM): 16A

3. Reliable thermal performance

Case thermal resistance: 2.4°C/W

Operating junction temperature range: -55°C to +150°C

TO-247 package, excellent thermal performance

4. Strong application adaptability

Easy input/output impedance matching

Integrated ESD protection diode

Excellent linearity for digital modulation systems

Specification

Model No.: A2T21H410-24SR6

Type: N-Channel Enhanced RF MOSFETs

Drain-source breakdown voltage (BVDSS): 65V

Gate source threshold voltage (VGS(th)): 2.0-4.0V

On-resistance (RDS(on)): 0.24Ω (max @VGS=10V)

Input capacitance (Ciss): 180pF (typical)

Output capacitance (Coss): 45pF (typical)

Reverse Transmission Capacitance (Crss): 5pF (Typ)

Package: TO-247

Compliance standard: RoHS, REACH

Application Scenario

A2T21H410-24SR6 is mainly used in mobile communication base stations for cellular communication systems in the frequency range of 2110 to 2170MHz, which can provide high power and high efficiency RF signal amplification for base stations to meet the increasing demand for mobile communication.