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Infineon IPD50P04P4L-11 P-Channel OptiMOS™-P2 Automotive MOSFET Transistors

Shenzhen Mingjiada Electronics Co., Ltd, as a global well-known electronic components distributor, specialises in supplying Infineon IPD50P04P4L-11 P-channel OptiMOS™-P2 automotive MOSFET transistors. Designed for automotive electronics applications, these high-performance MOSFETs feature high efficiency, low loss and high reliability, making them ideal for applications such as electric vehicle power management, battery management systems (BMS) and on-board chargers.

Product Overview Of IPD50P04P4L-11

IPD50P04P4L-11 is a P-channel power MOSFET in Infineon's OptiMOS™-P2 family, manufactured using advanced trench technology with the following core features:

Voltage and current parameters: 40V withstand voltage, 50A continuous drain current

Package: PG-TO252-3 (DPAK) package, suitable for high-density PCB design

On-resistance: Very low RDS(on) characteristics, significantly reducing on-state losses.

Switching performance: Optimised gate charge (Qg) and output capacitance (Coss) for high efficiency switching

Temperature range: Wide operating temperature range for automotive grade applications

Product Advantages Of IPD50P04P4L-11

1. Excellent electrical performance

IPD50P04P4L-11 adopts Infineon's advanced OptiMOS™-P2 technology, which has:

Lower on-resistance (RDS(on)) for reduced power loss

Higher switching frequency capability for improved system efficiency

Optimised body diode characteristics for improved reverse recovery performance

Enhanced thermal performance for increased power density

2. Automotive Grade Reliability

As an automotive-grade MOSFET, the IPD50P04P4L-11 meets stringent automotive electronics standards:

AEC-Q101 certification to ensure reliability in harsh environments

Excellent vibration and shock resistance

High-temperature capability for engine compartment and other high-temperature environments

Long-term supply guarantee to meet automotive product lifecycle requirements

3. Wide range of applications

IPD50P04P4L-11 is suitable for a variety of automotive electronic systems:

Electric/hybrid vehicles: on-board chargers (OBC), DC-DC converters, battery management systems (BMS).

Traditional automotive electronics: electric power steering (EPS), fuel injection system, water pump/fuel pump control

Body electronics: intelligent door locks, seat adjustment, window control

Infotainment systems: power management, audio amplifiers

Technical Parameters Of IPD50P04P4L-11

Transistor Polarity:P-Channel

Number of Channels:1 Channel

Vds - Drain-Source Breakdown Voltage:40 V

Id - Continuous Drain Current:50 A

Rds On - Drain-Source Resistance:17.2 mOhms

Vgs - Gate-Source Voltage:- 16 V, + 5 V

Vgs th - Gate-Source Threshold Voltage:1.2 V

Qg - Gate Charge:45 nC

Minimum Operating Temperature:- 55 C

Maximum Operating Temperature:+ 175 C

Pd - Power Dissipation:58 W

Fall Time:39 ns

Height:2.3 mm

Length:6.5 mm

Product Type:MOSFETs

Rise Time:9 ns

Typical Turn-Off Delay Time:46 ns

Typical Turn-On Delay Time:12 ns

Width:6.22 mm

Unit Weight:330 mg

Application Solutions Of IPD50P04P4L-11

1. Automotive Power Management System

Typical applications of the IPD50P04P4L-11 in automotive power management systems include:

Load switching: to control the on/off of high-current loads

Reverse polarity protection: prevents reverse battery connection from damaging circuits

Power path management: Seamless switching in multiple power systems

Pre-charge circuitry: limits capacitor charging current and protects contactors

2. Motor Drive Applications

With its high current capability and low on-resistance, the IPD50P04P4L-11 is ideally suited for use in:

Small DC motor drives

Stepper motor control

Fan/pump motor drives

Power seat/window drives

3. H-bridge topologies

In H-bridge circuits that require bidirectional control, the IPD50P04P4L-11 can be used with N-channel MOSFETs to achieve:

DC motor forward and reverse control

Solenoid valve drive

Other applications requiring bidirectional current