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Mingjiada focuses on recycling [ST] new gallium nitride (GaN) power IC

Mingjiada focuses on recycling [ST] new gallium nitride (GaN) power IC

Source:our siteTime:2025-03-26Views:

In recent years, with the rapid development of global semiconductor technology, gallium nitride (GaN), as a new semiconductor material, has been widely used in power management, 5G communication, electric vehicles and other fields with its advantages …

In recent years, with the rapid development of global semiconductor technology, gallium nitride (GaN), as a new semiconductor material, has been widely used in power management, 5G communication, electric vehicles and other fields with its advantages of high efficiency, high power density and low energy consumption. As one of the world's leading semiconductor suppliers, the gallium nitride power supply IC introduced by STMicroelectronics (ST) has become a hot product in the market for its excellent performance and reliability. However, with the fluctuation of market demand and the change of supply chain, some enterprises may face the problem of inventory backlog. In this context, Shenzhen Mingjiada Electronics Co., LTD., as a professional electronic component recovery and supply chain service provider, announced the recycling of a large number of new ST gallium nitride power supply IC inventory to provide strong support for the optimization of industry resources.


First, focus on recycled products

1, integrated intelligent GaN

Gallium nitride (GaN) technology is profoundly changing the field of power engineering by enabling unprecedented high speed, higher efficiency and power density with silicon MOSFETs. Our advanced MasterGaN system-level package integrates GaN transistors and gate drivers with an optimized gate drive layout, higher power density, and increased switching frequency due to minimal parasitic effects for greater efficiency.


2. STDRIVE® GaN Drive

GaN driver devices are half-bridge gate drivers for enhanced mode GaN FETs or N-channel power MOSFETs.


3, high voltage GaN converter

The introduction of high electron mobility transistor (GaN HEMT) technology enriches high voltage power converters. The use of GaN transistors has led to higher power density, efficiency, and switching frequency, helping to develop smaller and lighter PCBS, simplifying SMPS design, and improving overall performance.


Second, recycling conditions and processes

‌1. Inventory requirements ‌

Package integrity ‌ : accept QFN, TSSOP, SOIC and other package models, should retain the original anti-static packaging or traceable batch label ‌.

‌ technical parameters ‌ : provide the complete model, specifications and remaining life data, priority recovery of high-end models supporting multi-channel output (such as 4-12 channels) ‌.


‌2. Service process ‌

Quick quotation ‌ : After submitting the inventory list, Mingarda technical team will pass X-ray detection and electrical performance test, and feedback the graded quotation ‌ within 1 hour.

‌ flexible delivery ‌ : Support on-site inspection in Shenzhen warehouse or cross-border delivery in Hong Kong bonded zone, complete settlement of goods within 48 hours (bank transfer or cash payment) ‌.

‌ Environmental treatment ‌ : The non-reusable inventory is dismantled through the ISO 14001 certification process, and the precious metal purification rate is 99.9%, in line with RoHS standard ‌.


If you have excess ST Gallium Nitride (GaN) Power Supply ics that need to be cleared, please contact us at www.hkmjd.com.


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