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STMicroelectronics Power Transistors_STGB19NC60KDT4_Short Circuit Protection IGBT 20 A, 600 V
Shenzhen Mingjiada Electronics Co., Ltd. introduces STMicroelectronics power transistor_STGB19NC60KDT4_Short-circuit protection IGBT 20 A, 600 V, 125 W Surface mount D2PAKDescription:STGB19NC60KDT4 A high performance insulated gate bipolar transistor …
Shenzhen Mingjiada Electronics Co., Ltd. introduces STMicroelectronics power transistor_STGB19NC60KDT4_Short-circuit protection IGBT 20 A, 600 V, 125 W Surface mount D2PAK
Description:
STGB19NC60KDT4 A high performance insulated gate bipolar transistor (IGBT) belonging to the 600 V IGBT with Trench Technology family. The device features advanced PowerMESH™ technology for excellent switching performance and low conduction loss.
The STGB19NC60KDT4 is widely used in the following applications:
Industrial drives: motor control, welding equipment, CNC machine tools, etc.
Power systems: switching power supplies, inverters, chargers
Renewable energy: solar inverters, wind power generation
Electric vehicles: motor drive
Model No.: STGB19NC60KDT4
Voltage - Collector Breakdown (max): 600 V
Current - Collector (Ic) (max): 35 A
Current - Collector pulse (Icm): 75 A
Vce(on) (max) at varying Vge, Ic: 2.75 V @ 15 V, 12 A
Power - Max: 125 W
Switching Energy: 165µJ (on), 255µJ (off)
Input Type: Standard
Gate Charge: 55 nC
Td (on/off) value at 25°C: 30ns/105ns
Test Conditions: 480V, 12A, 10 Ohms, 15V
Reverse Recovery Time (trr): 31 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package/Housing: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Company Homepage: http://www.hkmjd.com/
Time:2025-02-22
Time:2025-02-22
Time:2025-02-22
Time:2025-02-22
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
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E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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