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STMicroelectronics Power Transistors_STGB19NC60KDT4_Short Circuit Protection IGBT 20 A, 600 V

STMicroelectronics Power Transistors_STGB19NC60KDT4_Short Circuit Protection IGBT 20 A, 600 V

Source:our siteTime:2025-02-22Views:

Shenzhen Mingjiada Electronics Co., Ltd. introduces STMicroelectronics power transistor_STGB19NC60KDT4_Short-circuit protection IGBT 20 A, 600 V, 125 W Surface mount D2PAKDescription:STGB19NC60KDT4 A high performance insulated gate bipolar transistor …

Shenzhen Mingjiada Electronics Co., Ltd. introduces STMicroelectronics power transistor_STGB19NC60KDT4_Short-circuit protection IGBT 20 A, 600 V, 125 W Surface mount D2PAK


Description:

STGB19NC60KDT4 A high performance insulated gate bipolar transistor (IGBT) belonging to the 600 V IGBT with Trench Technology family. The device features advanced PowerMESH™ technology for excellent switching performance and low conduction loss.


The STGB19NC60KDT4 is widely used in the following applications:

Industrial drives: motor control, welding equipment, CNC machine tools, etc.

Power systems: switching power supplies, inverters, chargers

Renewable energy: solar inverters, wind power generation

Electric vehicles: motor drive


Model No.: STGB19NC60KDT4

Voltage - Collector Breakdown (max): 600 V  

Current - Collector (Ic) (max): 35 A  

Current - Collector pulse (Icm): 75 A  

Vce(on) (max) at varying Vge, Ic: 2.75 V @ 15 V, 12 A  

Power - Max: 125 W  

Switching Energy: 165µJ (on), 255µJ (off)  

Input Type: Standard  

Gate Charge: 55 nC  

Td (on/off) value at 25°C: 30ns/105ns  

Test Conditions: 480V, 12A, 10 Ohms, 15V  

Reverse Recovery Time (trr): 31 ns  

Operating Temperature: -55°C ~ 150°C (TJ)  

Mounting Type: Surface Mount  

Package/Housing: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB  

Supplier Device Package: D2PAK 


Company Homepage: http://www.hkmjd.com/

STGB19NC60KDT4.jpg

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