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Flash Memory Chip_S79FL512SDSMFBG03_NOR Flash Memory

Flash Memory Chip_S79FL512SDSMFBG03_NOR Flash Memory

Source:our siteTime:2025-02-18Views:

Shenzhen Mingjiada Electronics Co., Ltd Original Genuine Infineon Flash Memory Chip_S79FL512SDSMFBG03_NOR Flash Memory IC 512Mb SPI - Quad I/O 80 MHz 16-SOICGeneral DescriptionThe S79FL512SDSMFBG03 device connects two quad I/O SPI devices with a singl…

Shenzhen Mingjiada Electronics Co., Ltd Original Genuine Infineon Flash Memory Chip_S79FL512SDSMFBG03_NOR Flash Memory IC 512Mb SPI - Quad I/O 80 MHz 16-SOIC


General Description

The S79FL512SDSMFBG03 device connects two quad I/O SPI devices with a single CS# to form an eight-bit I/O data path. This byte I/O interface is referred to as dual quad I/O. These devices connect to the host system via SPI. Supports traditional SPI single-bit serial inputs and outputs (IO1 and IO5), as well as four-bit (Quad I/O or QIO) serial commands. This multiwidth interface is referred to as SPI Multi I/O or MIO. In addition, both devices add support for QIO's DDR read command, which transfers addresses and reads data on both edges of the clock. the Eclipse architecture features a page programming buffer that allows up to 256 words (512 bytes) or 512 words (1024 bytes) to be programmed in a single operation. This allows effective programming (up to 2 MB/s or 3 MB/s, respectively) and erasure (up to 1 MB/s) much faster than previous generation SPI programming or erasure algorithms. Executing code directly from flash memory is commonly referred to as executing in place (XIP). By using S79FL-S devices and QIO or DDR-QIO commands at the higher clock rates supported, instruction read transfer rates can meet or exceed those of traditional parallel interface, asynchronous, and NOR flash memory while dramatically reducing the number of signals.The S79FL-S products deliver the fastest read and write performance required for high-density and a wide variety of embedded applications. They are ideal for code shadowing, XIP and data storage.


Product Attributes

Storage Capacity: 512 Mbit

Supply Voltage - Min: 2.7 V

Supply Voltage - Max: 3.6 V

Active read current (max): 180 mA

Interface type: SPI

Maximum clock frequency: 80 MHz

Organisation: 64 M x 8

Data bus width: 8 bit

Timing type: Asynchronous

Minimum operating temperature: - 40 C

Maximum operating temperature: + 105 C


Key Features

High reliability: Supports industrial-grade temperature range for harsh environments.

Fast read performance: Provides high-speed data access to meet real-time processing needs.

Low-power design: Suitable for battery-powered or low-power applications.

High compatibility: Supports direct connection with a wide range of microcontrollers and processors.

Long life: Supports high erase and write counts, suitable for frequently updated application scenarios.


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