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Supply Infineon CY62167G30-45ZXI High Performance Static Random Access Memory (SRAM)
DescriptionThe CY62167G30-45ZXI is a high-performance CMOS, low-power (MoBL) SRAM device developed and manufactured by Infineon with built-in ECC. The CY62167GE30 device includes an ERR pin that signals one unit error detection and correction event pe…
Description
The CY62167G30-45ZXI is a high-performance CMOS, low-power (MoBL) SRAM device developed and manufactured by Infineon with built-in ECC. The CY62167GE30 device includes an ERR pin that signals one unit error detection and correction event per read cycle.
The device has a unique byte-off feature, and if both byte enablement (BHE and BLE) are disabled, the device seamlessly switches to standby mode regardless of the chip's enabled state, saving power. On the CY62167GE30 device, unit errors at the accessed location are detected and corrected by setting the ERR output (ERR= high).
Features
• Ultra-low standby current
- Standard standby current: 1.5A
- Maximum standby current :8 AMps
• High speed :45 nanoseconds
• Embedded error correction code (ECC) for unit error correction
• Operating voltage range: 2.2V to 3.6V
• 1.0v data retention
Transistor-transistor logic (TTL) is compatible with inputs and outputs
• An error indication (ERR) pin that indicates 1-bit error detection and correction
• 48-pin TSOP I package, configurable as 1M x 16 or 2M x 8 SRAM
• Available in lead-free 48-pin VFBGA and 48-pin TSOP I packages
Application scenario
The CY62167G30-45ZXI device is used in a wide variety of electronic devices requiring high-speed data processing and real-time response, including:
Man-machine interface
Industrial robot system solutions for Industry 4.0
Servo motor drive and control
Time:2025-01-22
Time:2025-01-22
Time:2025-01-22
Time:2025-01-22
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