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New and original [EV1320QI] 2A Source/Sink DDR memory terminal Converter

New and original [EV1320QI] 2A Source/Sink DDR memory terminal Converter

Source:our siteTime:2025-01-22Views:

OverviewThe EV1320QI is a DC-DC converter designed for memory terminal applications. The device offers high efficiency of up to 96% while offering solution sizes similar to linear terminating devices.The device is designed to be powered directly by a …

Overview

The EV1320QI is a DC-DC converter designed for memory terminal applications. The device offers high efficiency of up to 96% while offering solution sizes similar to linear terminating devices.

EV1320QI.jpg

The device is designed to be powered directly by a VDDQ feed rail. No external partial frequency modulator or reference voltage source is required. The EV1320QI provides a very stable output voltage (VTT) that tracks the VDDQ while simultaneously absorbing and draining up to 2A continuous output current. Up to four EV1320QI devices can be connected in parallel to provide up to 8A of current. An enable pin with an output discharge can be used in the S3(suspended to RAM) state.


The EV1320QI is designed to meet the precise voltage, fast transient requirements of current and future high-performance, DDR2, DDR3, and low-power DDR4 JEDEC VTT. Advanced circuit technology and high switching frequencies provide high-quality, compact, non-isolated DC-DC conversions.


Basic parameter

Applications: Converter, DDR

Voltage - Input: 0.95V ~ 1.8V, 3V ~ 3.465V

Output number: 1

Voltage - output: 0.5V ~ 0.9V

Operating temperature: -40°C ~ 85°C

Mounting type: Surface mount type

Device package: 16-QFN (3x3)

Basic product number: EV1320


Application scenario

The EV1320QI is ideal for VTT bus terminals for DDR2, DDR3, low-power DDR4, and QDR memory.


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