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Nexperia recently announced that it has added two new 1200V, 20A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronic devices. The PSC20120J and PSC20120L are specifically designed to meet the demand for ultra-low power rectifiers in industrial applications and can play a key role in high-efficiency energy conversion scenarios. This type of device is particularly suitable for applications in high-power artificial intelligence (AI) server infrastructure, power supplies for telecommunications equipment, and solar inverters.

The new Schottky diode features temperature-sensitive capacitive switching and zero recovery performance, offering advanced performance and an excellent quality factor (QC x VF). In addition, its switching performance is almost unaffected by changes in current and switching speed. The integrated PiN Schottky (MPS) structure adopted by these devices brings more advantages, such as demonstrating outstanding surge current tolerance with peak forward current (IFSM). This feature reduces the need for additional protection circuits, significantly lowers system complexity, and enables engineers to achieve higher efficiency in high-voltage applications with a smaller size.

The PSC20120J is packaged in a true dual-pin D2PAK R2P (TO-262-3) surface mount (SMD) power plastic package, while the PSC20120L is packaged in a true dual-pin TO247 R2P (TO-247-2) through-hole power plastic package. These thermally stable packages can enhance the reliability of devices in high-voltage applications at operating temperatures up to 175 ° C. As a mature manufacturer of high-quality semiconductor products, Nexperia has won market trust with a variety of semiconductor technologies supported by a strong supply chain, which further provides a guarantee for designers.

For information on Nexperia SiC schottky diode product portfolio for more information, please visit: www.nexperia.cn/products/diodes/silicon-carbide-sic-schottky-diodes about Nexperia

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