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Product Description:

The CY15B128Q-SXET is a 128 Kb non-volatile memory with advanced ferroelectric technology. F-RAM is non-volatile and performs read and write operations similar to RAM. It provides 121 years of reliable data retention while eliminating the complexity, overhead, and system-level reliability issues associated with serial flash memory, EEPROM, and other non-volatile memory.

Unlike serial flash memory and EEPROM, the CY15B128Q-SXET performs write operations at bus speeds. There is no write delay. After each byte is successfully transferred to the device, the data is immediately written to the memory array. The next bus cycle can begin without data polling. In addition, the product has strong write durability compared to other non-volatile memories. The CY15B128Q can support 1013 read/write cycles, or 10 million times more write cycles than EEPROM.

These features make the CY15B128Q-SXET ideal for non-volatile memory applications that require frequent or fast writes. Examples include data logging (the number of write cycles can be critical) and demanding industrial controls (long write times for serial flash memory or EEPROM can lead to data loss).

Specifications:

Memory type: non-volatile

Memory format: FRAM

Technology: FRAM (Ferroelectric RAM)

Storage capacity: 128Kb

Memory organization: 16K x 8

Memory interface: SPI

Clock frequency: 33 MHz

Write cycle time - word, page: -

Access time: 9 ns

Voltage - Power supply: 2.7V ~ 3.6V

Operating temperature: -40°C ~ 125°C (TA)

Mounting type: Surface mount type

Package/housing: 8-SOIC (0.154", 3.90mm wide)

Supplier device package: 8-SOIC

Basic product number: CY15B128

Applications:

Automotive Body Control Module (BCM)

Car main engine