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To accelerate the design of gallium nitride (GaN) power supplies (PSUs) with excellent energy efficiency and power density, ST has introduced the EVL250WMG1L resonant converter reference design based on the MasterGaN1L system-in-package (SiP).

ST's MasterGaN-SiP integrates GaN power transistors with gate drivers optimised for switching speed and control accuracy in a single package. Using a highly integrated system-in-package SiP instead of an equivalent solution with multiple discrete components helps to maximise the performance and reliability of the power supply, while speeding up the design and saving PCB board space.

The new power supply reference design targets applications where space is limited and energy efficiency is critical for industrial-grade power supplies. The power supply integrates the MasterGaN1L (with two built-in 650V 150mΩ GaN FET transistors) with ST's L6599A resonance controller, providing a peak energy efficiency of more than 94 per cent and eliminating the need for a heatsink at the raw edge. The power supply also integrates ST's SRK2001A synchronous rectifier controller with a compact overall area of 80mm x 50mm and a power density of up to 34 watts per cubic inch (W/inch³).

The power supply has a maximum output current of 10A and an output power of 250W at 24V DC with a standby current of less than 1µA for excellent energy savings.The L6599A and SRK2001A have built-in protections against overcurrent, short-circuit, and over-voltage shocks, while input voltage monitoring ensures that the power supply starts up correctly and provides under-voltage lockout.

The EVL250WMG1L is available now with all features integrated for immediate evaluation of power supply functionality.