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Automotive MOSFET_IAUC100N04S6N015_OptiMOS™- 6 Power Transistors_Automotive Applications
Mingjiada Electronic New and Original Infineon Automotive Grade MOSFET_IAUC100N04S6N015_OptiMOS™- 6 Power Transistor, 40V, N-Ch, 1.5 mΩ Max, SS08 (5x6)Product Overview:The IAUC100N04S6N015 is a 40V, N-channel, 1.5 mΩ maximum on-resistance (RDS(on))…
Mingjiada Electronic New and Original Infineon Automotive Grade MOSFET_IAUC100N04S6N015_OptiMOS™- 6 Power Transistor, 40V, N-Ch, 1.5 mΩ Max, SS08 (5x6)
Product Overview:
The IAUC100N04S6N015 is a 40V, N-channel, 1.5 mΩ maximum on-resistance (RDS(on)) automotive-grade MOSFET in an SS08 (5x6mm²) package.
Feature:
OptiMOS™ technology designed for automotive applications.
N-channel enhancement mode.
AEC Q101 compliant for automotive grade applications.
Maximum operating temperature up to 175°C.
Green product (RoHS compliant).
100% avalanche tested.
Electrical Characteristics:
Continuous drain current (I_D): 100A.
On-resistance (RDS(on)@Vgs,Id): 1.55mΩ max. at V_GS=10V, Id=50A.
Threshold voltage (Vgs(th)@Id): 3V at Id=150uA.
Product Attributes:
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 40 V
Current at 25°C - Continuous Drain (Id) : 100 A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
On Resistance (Max) at Different Id, Vgs: 1.55 mOhm @ 50A, 10V
Vgs(th) at different Id (max): 3V @ 50µA
Gate Charge (Qg) at Vgs (max): 55 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 3470 pF @ 25 V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive Grade
Qualification: AEC-Q101
Mounting Type: Surface Mount
If you are interested, please feel free to contact Mr Chen by phone:
Tel: +86 13410018555
Email: sales@hkmjd.com
Website: www.hkmjd.com
Time:2025-01-23
Time:2025-01-23
Time:2025-01-23
Time:2025-01-23
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
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