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Automotive MOSFET_IAUC100N04S6N015_OptiMOS™- 6 Power Transistors_Automotive Applications

Automotive MOSFET_IAUC100N04S6N015_OptiMOS™- 6 Power Transistors_Automotive Applications

Source:our siteTime:2024-12-14Views:

Mingjiada Electronic New and Original Infineon Automotive Grade MOSFET_IAUC100N04S6N015_OptiMOS™- 6 Power Transistor, 40V, N-Ch, 1.5 mΩ Max, SS08 (5x6)Product Overview:The IAUC100N04S6N015 is a 40V, N-channel, 1.5 mΩ maximum on-resistance (RDS(on))…

Mingjiada Electronic New and Original Infineon Automotive Grade MOSFET_IAUC100N04S6N015_OptiMOS™- 6 Power Transistor, 40V, N-Ch, 1.5 mΩ Max, SS08 (5x6)


Product Overview:

The IAUC100N04S6N015 is a 40V, N-channel, 1.5 mΩ maximum on-resistance (RDS(on)) automotive-grade MOSFET in an SS08 (5x6mm²) package.

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Feature:

OptiMOS™ technology designed for automotive applications.

N-channel enhancement mode.

AEC Q101 compliant for automotive grade applications.

Maximum operating temperature up to 175°C.

Green product (RoHS compliant).

100% avalanche tested.


Electrical Characteristics:

Continuous drain current (I_D): 100A.

On-resistance (RDS(on)@Vgs,Id): 1.55mΩ max. at V_GS=10V, Id=50A.

Threshold voltage (Vgs(th)@Id): 3V at Id=150uA.


Product Attributes:

FET Type: N-Channel  

Technology: MOSFET (Metal Oxide)  

Drain-Source Voltage (Vdss): 40 V  

Current at 25°C - Continuous Drain (Id) : 100 A (Tc)  

Drive Voltage (Max Rds On, Min Rds On): 7V, 10V  

On Resistance (Max) at Different Id, Vgs: 1.55 mOhm @ 50A, 10V  

Vgs(th) at different Id (max): 3V @ 50µA  

Gate Charge (Qg) at Vgs (max): 55 nC @ 10 V  

Vgs (max): ±20V  

Input capacitance (Ciss) at varying Vds (max): 3470 pF @ 25 V  

Power Dissipation (Max): 100W (Tc)  

Operating Temperature: -55°C ~ 175°C (TJ)  

Grade: Automotive Grade  

Qualification: AEC-Q101  

Mounting Type: Surface Mount 


If you are interested, please feel free to contact Mr Chen by phone:

Tel: +86 13410018555

Email: sales@hkmjd.com

Website: www.hkmjd.com

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