sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-channel MOSFET Array
Brand:AOS
Particular Year:19+
Package:DFN
Delivery Date:New and Original
Stock: 4482pcs
AON7934 is a dual N-channel MOSFET array in a compact package, featuring low on-resistance and logic-level gate drive characteristics. It is ideally suited for applications requiring high-efficiency power management and power conversion.
AON7934 Core Specifications:
Core Function: Dual N-channel MOSFET array (half-bridge configuration)
Mounting Type: Surface Mount
Package Type: 8-DFN-EP (3x3) Exposed Pad (also referred to as WDFN-8 or QFN8(3X3))
Drain-Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 13A, 15A (different channels, @25°C) or 16A
On-Resistance (Rds(on)): 10.2mΩ @ 13A, 10V
Gate Threshold Voltage (Vgs(th)): 2.2V @ 250μA
Gate charge (Qg): 11 nC @ 10 V
Input capacitance (Ciss): 485 pF @ 15 V
Maximum power dissipation (Pd): 2.5 W
Operating junction temperature (Tj): -55°C to 150°C
FET characteristics: Logic Level Gate
AON7934 Features
Low on-resistance: Just 10.2mΩ, helping reduce power loss and improve overall efficiency.
Fast switching capability: Gate charge of only 11nC ensures rapid switching.
High current handling: Continuous drain current up to 13A to 15A at 25°C.
Compact packaging: Utilises a DFN-8 (3x3mm) package, suitable for space-constrained applications.
Environmental compliance: Lead-free (Pb-Free) and RoHS compliant.
These characteristics enable the AON7934 to excel in multiple domains including power management, motor control, and consumer electronics.
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