Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

The TP65H300G4LSG 650V 240mΩ gallium nitride (GaN) FET is a normally closed device built using Renesas Electronics' fourth-generation platform. It combines the most advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, providing outstanding reliability and performance. The TP65H300G4LSG transistor adopts the industry-standard PQFN-8x8 package and features a universal source package configuration.

Main specifications

FET type: N-channel

Technology: GaNFET (Gallium nitride

Drain-source voltage (Vdss) : 650 V

Current at 25°C - continuous drain (Id) : 6.5A (Tc)

Drive voltage (maximum Rds On, minimum Rds On) : 8V

On-resistance (maximum value) at different ids and Vgs: 312 milliohms @ 5A, 8V

Vgs(th) (maximum value) at different ids: 2.6V @ 500µA

Gate charge (Qg) at different Vgs (maximum value) : 9.6 NNC @ 8 V

Vgs (maximum value) : ±18V

Input capacitance (Ciss) at different Vds (maximum value) : 760 pF @ 400 V

FET function: -

Power dissipation (maximum) : 21W (Tc)

Operating temperature: -55°C to 150°C (TJ)

Installation type: Surface mount type

Package: 3-PQFN (8x8)

Typical applications of TP65H300G4LSG transistor

The field of consumption

Power adapter

Low-power SMPS

Lighting system

• 1.Is the inventory and price seen on the platform accurate?

  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

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• 6.Can the company issue an invoice?

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