sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:PSRAM Memory
Brand:INFINEON
Particular Year:25+
Package:24-FBGA
Delivery Date:New and Original
Stock: 2000pcs
S27KS0642GABHI030 device is a high-speed CMOS, self-refresh DRAM, with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS™ interface master (host). Since the host is not required to manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as Pseudo Static RAM (PSRAM).
Feature Of S27KS0642GABHI030
HYPERBUSTM interface
1.8V / 3.0 V interface support
Single-ended clock (CK)- 11 bus signals
Optional differential clock (CK, CK#) - 12 bus signals
Chip select (CS#)
8-bit data bus (DQ[7:0])
Hardware reset (RESET#)
Bidirectional read-write data strobe (RWDS)
Output at the start of all transactions to indicate refresh latency
Output during read transactions as Read data strobe
Input during write transactions as Write data mask
-Optional DDR center-aligned read strobe (DCARS)
During read transactions RWDS is offset by a second clock, phase shifted from CK
The phase shifted clock is used to move the RWDS transition edge within the read data eye
200 MHz maximum clock rate
DDR - transfers data on both edges of the clock
Data throughput up to 400 MBps (3,200 Mbps)
Configurable burst characteristics:
Linear burst
Hybrid option - one wrapped burst followed by linear burst
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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