sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NOR Flash
Brand:INFINEON
Particular Year:25+
Package:FBGA-64
Delivery Date:New and Original
Stock: 2000pcs
The S29GL01GS11DHIV10 is a high-performance 1Gb parallel NOR flash memory chip in a 64-FBGA package (9mm x 9mm) with an operating voltage range of 2.7V~3.6V, featuring a fast access time of 110ns and a write cycle time of 60ns. It is designed for embedded systems that require high-speed data storage and readout.
S29GL01GS11DHIV10 Core Features
Storage capacity: 1Gb (64M x 16-bit or 128M x 8-bit configurable)
High performance interface: Parallel interface, 110ns fast access time, 60ns word/page write cycle time
Wide voltage operation: 2.7V~3.6V operating voltage range, compatible with low power consumption design
Industrial-grade reliability: -40°C to 85°C operating temperature range for harsh environments
Advanced architecture: supports asynchronous operation and page mode (32-byte page)
Technical Advantages
Manufactured in 65nm MirrorBit® Eclipse™ technology
Supports Common Flash Interface (CFI) standard
Bottom/top boot block configuration options available
Integrated status register and data polling capabilities
Supports advanced sector protection mechanisms
S29GL01GS11DHIV10 Product Attributes
Memory Type: Non-Volatile
Memory Format: Flash
Technology: FLASH - NOR
Memory Capacity: 1Gb
Memory Organisation: 64M x 16
Memory Interface: Parallel
Write cycle time - word, page: 60 ns
Access Time: 110 ns
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package/Housing: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)
S29GL01GS11DHIV10 Typical Applications
Embedded system programme storage
Network communication devices
Industrial control systems
Automotive electronics
Model
Brand
Package
Quantity
Describe
INFINEON
BGA-24
2000
FLASH - NOR Memory IC 512Mb SPI - Quad I/O 66 MHz 24-BGA (8x6)
INFINEON
BGA-24
2000
FLASH - NOR Memory IC 512Mb SPI - Quad I/O 133 MHz 24-BGA (6x8)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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