sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Automotive MOSFET
Brand:ST
Particular Year:25+
Package:HiP247-3
Delivery Date:New and original
Stock: 3000pcs
The SCT012W90G3-4AG device is an automotive grade silicon carbide power MOSFET using ST's advanced third generation silicon carbide MOSFET technology. The device has extremely low RDS (on) as well as low capacitance and very high switching over the entire temperature range, resulting in improved application performance in terms of frequency, energy efficiency, system size and weight reduction.
Technical parameter
Product: SCT012W90G3-4AG
Package/Box: HiP247-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 900 V
Id- Continuous drain current: 110 A
Rds On- drain-source on-resistance: 15.8 mOhms
Vgs - grid - source voltage: -10 V, + 22 V
Vgs TH-gate source threshold voltage: 3.1V
Qg- Grid charge: 138 nC
Minimum operating temperature: -55 C
Maximum operating temperature: + 200 C
Pd-power dissipation: 625 W
Channel mode: Enhancement
Qualification: AEC-Q101
Configuration: Single
Descent time: 16 ns
Package: Tube
Product: SiC MOSFETS
Product type: SiC MOSFETS
Rise time: 43 ns
Typical shutdown delay: 41 ns
Typical connection delay: 20 ns
In addition, SCT012W90G3-4AG devices comply with AEC-Q101 and are suitable for applications with high reliability requirements such as automotive electronics .
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TO252-3
15000
-30V, P-Ch, 4.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-P2
INFINEON
PG-TDSON-8
10000
40V, N-Ch, 2.8 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™-5
ST
TO-247-3
15000
Automotive Grade N-Channel 600 V, 0.052 Ohm Typ, 50 A MDmesh DM2 Power MOSFET, TO-247 Package
INFINEON
PG-TDSON-8
35000
40V, Dual N-Ch, 11.6 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2
INFINEON
PG-TDSON-8
25000
40V, N-Ch, 1.5 mΩ max, Automotive MOSFET, SS08 (5x6), OptiMOS™-5
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