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The A2T27S020GNR1 is a 2.5 WLDMOS RF power transistor designed for mobile base station applications in the frequency range of 400 to 2700 MHz.

Features

Increased negative gate source voltage range for improved Class C amplifier operation

Designed for digital pre-distortion error correction systems

General purpose wideband driver

RoHS compliant

A2T27S020GNR1 Product Attributes

Manufacturer: NXP

Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors

Transistor Polarity: N-Channel

Technology: Si

Vds-drain-source breakdown voltage: 65 V

Operating frequency: 400 MHz to 2.7 GHz

Gain: 21.1 dB

Output power: 2.5 W

Minimum operating temperature: - 40 C

Maximum operating temperature: + 150 C

Mounting Style: Screw Mount

Package / Case: TO-270G-2

Number of Channels: 1 Channel

Product Type: RF MOSFET Transistors

Series: A2T27S020

Factory Package Quantity: 500

Sub Category: MOSFETs

Transistor Type: LDMOS FETs

Type: RF Power MOSFET

Vgs - gate-source voltage: + 10 V

Vgs th-gate-source threshold voltage: 1.6 V

Unit weight: 548 mg

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