sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF JFET Transistors
Brand:Qorvo
Particular Year:24+
Package:SMD
Delivery Date:New and original
Stock: 3000pcs
The Qorvo QPD2080D 800µm discrete GaAs pHEMT (Pseudocrystalline High electron mobility Transistor) operates in the frequency range from DC to 20GHz. Typically, the QPD2080D has an output power of 29.5dBm (at P1dB), a gain of 11.5dB, and a power addition efficiency of 56% (at 1dB compression).
QPD2080D design uses 0.25µm power pHEMT production process. The process optimizes microwave power and efficiency through advanced technology under high drain bias operating conditions.
Feature
Frequency range: DC to 20GHz
P1dB output power: 29.5dBm (typical value)
Gain: 11.5dB (typical at 12GHz)
PAE: 56% (typical at 12GHz)
Noise factor: 1dB (typical value at 12GHz)
Drain voltage: 8V
Drain current: 130mA
0.25µm GaAs pHEMT technology
Bare piece size: 0.41mm x 0.54mm x 0.10mm
Halogen-free, lead-free, RoHS compliant
Applications
Communication
Radar
Point-to-point radio
Satellite communication
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Headquartered in North Carolina, Qorvo brings together more than 30 years of design experience and employs nearly 8,000 people worldwide. Qorvo has two production bases in China, located in Beijing and Dezhou, Shandong Province. Qorvo(Beijing) was est…
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E-mail:sales@hkmjd.com
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