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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF Transistor
Brand:NXP
Particular Year:24+
Package:DFN-6
Delivery Date:New and Original
Stock: 2000pcs
A5G26S008NT6 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2300 to 2690 MHz.
Specifications
Technology: GaN Si
Id - Continuous Drain Current: 17 mA
Vds - Drain-Source Breakdown Voltage: 125 V
Operating Frequency: 2.496 GHz to 2.69 GHz
Gain: 18.4 dB
Output Power: 27 dBm
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Feature
High terminal impedances for optimal broadband performance
Designed for low complexity digital linearization systems
Universal broadband driver
Optimized for massive MIMO active antenna systems for 5G base stations
RoHS compliant
Model
Brand
Package
Quantity
Describe
NXP
TO-270G-2
4438
RF MOSFET Transistor Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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