sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Power MOSFET
Brand:ST
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 5000pcs
The STW14NK50Z is an N-channel power MOSFET belonging to the SuperMESH™ family, featuring high withstand voltage, low on-resistance and high current carrying capacity.The SuperMESHTM family is the result of an extreme optimisation of ST's proven band PowerMESHTM layout. In addition to a significant reduction in on-resistance, special care has been taken to ensure excellent dv/dt capability for the most demanding applications. This series complements ST's full range of high-voltage MOSFETs, including the revolutionary MDmeshTM products.
Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimisation
Very low intrinsic capacitance
Very good manufacturing repeatability
Specification
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 500 V
Id-Continuous drain current: 14 A
Rds On-drain on-resistance: 380 mOhms
Vgs - gate-source voltage: - 30 V, + 30 V
Vgs th - gate-source threshold voltage: 3 V
Qg-gate charge: 92 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-Power dissipation: 150 W
Channel mode: Enhancement
Configuration: Single
Fall time: 12 ns
Forward transconductance - min: 12 S
Height: 20.15 mm
Length: 15.75 mm
Product Type: MOSFETs
Rise Time: 16 ns
Transistor Type: 1 N-Channel
Typical Off Delay Time: 54 ns
Typical Turn-On Delay Time: 24 ns
Width: 5.15 mm
Model
Brand
Package
Quantity
Describe
ST
TO-263
32000
N-channel 100 V, 9 mOhm typical, 110 A STripFET II power MOSFET, D2PAK package
ST
PowerFLAT 8x8
3000
N-channel 600 V, 175 mOhm typical value, 15 A MDmesh DM6 power MOSFET, PowerFLAT 8x8 HV package
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