sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT4045DEHRC11
Data Manual:SCT4045DEHRC11.pdf
Brand:ROHM
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 3000pcs
SCT4045DEHRC11 N-Channel 750V 34A 115W Through Hole TO-247-3 Transistors
Product Attributes
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 750 V
Id - Continuous Drain Current: 34 A
Rds On - Drain-Source Resistance: 45 mOhms
Vgs - Gate-Source Voltage: - 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage: 4.8 V
Qg - Gate Charge: 63 nC
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 115 W
Channel Mode: Enhancement
Fall Time: 12 ns
Forward Transconductance - Min: 9.3 S
Product Description
SCT4045DEHRC11 is Automotive Grade N-channel SiC power MOSFET Transistors 750 V 34A (Tc) 115W Through Hole TO-247N.
Features
40V to 150V drain-source breakdown range
25A to 210A continuous drain current range
1.34mΩ to 73mΩ drain-source resistance range
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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