sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT4062KW7TL
Data Manual:SCT4062KW7TL.pdf
Brand:ROHM
Particular Year:23+
Package:TO-263-7L
Delivery Date:New and Original
Stock: 1000pcs
The SCT4062KW7 is a 1200V, 40A Nch SiC power MOSFET.
Product Properties
Product Category: MOSFETs
Technology: SiC
Mounting Style: SMD/SMT
Package / Case: TO-263-7
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-source breakdown voltage: 1.2 kV
Id-Continuous drain current: 24 A
Rds On - drain-source on-resistance: 62 mOhms
Vgs - Gate-source voltage: - 4 V, + 21 V
Vgs th - gate source threshold voltage: 4.8 V
Qg - gate charge: 64 nC
Maximum operating temperature: + 175 C
Pd - Power dissipation: 93 W
Channel mode: Enhancement
Compliance: Done
Configuration: Single
Drop time: 10 ns
Forward Transconductance - Min: 6.5 S
Product Type: MOSFET
Rise time: 11 ns
Factory Pack Quantity: 1000
Sub Category: MOSFETs
Transistor Type: 1 N-Channel
Typical Off Delay Time: 22 ns
Typical turn-on delay time: 4.4 ns
Part Number Alias: SCT4062KW7
Applications
Solar inverters
DC/DC converters
Switching mode power supplies
Induction heating
Motor drives
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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