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IC Chip SCT3030KLGC11 Silicon Carbide Single MOSFETs Transistors Through Hole

Product Attributes

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Id - Continuous Drain Current: 72 A

Rds On - Drain-Source Resistance: 30 mOhms

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V

Qg - Gate Charge: 131 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 339 W

Channel Mode: Enhancement

Product Description

SCT3030KLGC11 MOSFETs ideal for drive applications that operate on 24V/36V/48V power supplies.

Features

Low on-resistance

High-power small package

Pb-free lead plating

RoHS compliant

Halogen Free

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