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SCT4026DRC15 750V 56A (Tc) 176W N-channel MOSFETs Transistors, through-hole TO-247-4L.

The SCT4026DRC15 is a SiC MOSFET that contributes to miniaturisation and lower power consumption in a package with driver-source pins to maximise the high-speed switching performance of SiC MOSFETs.

Product attributes:

FET Type: N-channel  

Technology: SiCFET (Silicon Carbide)  

Drain-source voltage (Vdss): 750 V  

Current at 25°C - continuous drain (Id): 56 A (Tc)  

Drive voltage (max Rds On, min Rds On): 18 V  

On-resistance (max) for different Id, Vgs: 34 milliohms @ 29A, 18V  

Vgs(th) for different Id (max): 4.8V @ 15.4mA  

Gate charge (Qg) at different Vgs (max): 94 nC @ 18 V  

Vgs (max): +21V, -4V  

Input capacitance (Ciss) at different Vds (max): 2320 pF @ 500 V  

FET function: -  

Power dissipation (max): 176W  

Operating temperature: 175°C (TJ)  

Mounting type: Through-hole  

Supplier Device Package: TO-247-4L  

Package/Case: TO-247-4  

Basic Part Number: SCT4026

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