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The SCT3030ARC14 is an N-channel SiC power MOSFET transistor, 650V 70A (Tc) 262W, through-hole TO-247-4L.

Product Properties

Manufacturer: ROHM Semiconductor

Product Type: MOSFET

Technology: SiC

Mounting Style: Through Hole

Package / Case: TO-247-4

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 650 V

Id-Continuous drain current: 70 A

Rds On - drain-source on-resistance: 30 mOhms

Vgs - Gate-source voltage: - 4 V, + 22 V

Vgs th - gate source threshold voltage: 5.6 V

Qg - gate charge: 104 nC

Min. operating temperature: - 55 C

Max. operating temperature: + 175 C

Pd - power dissipation: 262 W

Channel mode: Enhancement

Series: SCT3x

Configuration: Single

Drop time: 21 ns

Forward Transconductance - Min: 9.4 S

Product type: MOSFET

Rise time: 22 ns

Transistor Type: 1 N-Channel

Typical Off Delay Time: 27 ns

Typical turn-on delay time: 7 ns

Part Number Alias: SCT3030AR

Unit weight: 6 g

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